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PIC12F635ESS датащи(PDF) 179 Page - Microchip Technology

номер детали PIC12F635ESS
подробное описание детали  PIC12F635/PIC16F636/639 Data Sheet
PDF  234 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC12F635ESS датащи(HTML) 179 Page - Microchip Technology

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© 2007 Microchip Technology Inc.
DS41232D-page 177
PIC12F635/PIC16F636/639
15.8
Thermal Considerations
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +125°C
Para
m
No.
Sym
Characteristic
Typ
Units
Conditions
TH01
θJA
Thermal Resistance
Junction to Ambient
PIC12F635
84.6
°C/W 8-pin PDIP package
163.0
°C/W 8-pin SOIC package
52.4
°C/W 8-pin DFN 4x4x0.9 mm package
52.4
°C/W 8-pin DFN-S 6x5 mm package
PIC16F636
69.8
°C/W 14-pin PDIP package
85.0
°C/W 14-pin SOIC package
100.4
°C/W 14-pin TSSOP package
46.3
°C/W 16-pin QFN 4x0.9mm package
PIC16F639 108.1
°C/W 20-pin SSOP package
TH02
θJC
Thermal Resistance
Junction to Case
PIC12F635
41.2
°C/W 8-pin PDIP package
38.8
°C/W 8-pin SOIC package
3.0
°C/W 8-pin DFN 4x4x0.9 mm package
3.0
°C/W 8-pin DFN-S 6x5 mm package
PIC16F636
32.5
°C/W 14-pin PDIP package
31.0
°C/W 14-pin SOIC package
31.7
°C/W 14-pin TSSOP package
2.6
°C/W 16-pin QFN 4x0.9mm package
PIC16F639
32.2
°C/W 20-pin SSOP package
TH03 TJ
Junction Temperature
150
°C
For derated power calculations
TH04 PD
Power Dissipation
—
W
PD = PINTERNAL + PI/O
TH05 PINTERNAL Internal Power Dissipation
—
W
PINTERNAL = IDD x VDD
(NOTE 1)
TH06 PI/O
I/O Power Dissipation
—
W
PI/O =
Σ (IOL * VOL) + Σ (IOH * (VDD - VOH))
TH07 PDER
Derated Power
—
W
PDER = (TJ - TA)/
θJA
(NOTE 2, 3)
Note 1:
IDD is current to run the chip alone without driving any load on the output pins.
2:
TA = Ambient Temperature.
3:
Maximum allowable power dissipation is the lower value of either the absolute maximum total power
dissipation or derated power (PDER).



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