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PIC12F635ESS датащи(PDF) 176 Page - Microchip Technology

номер детали PIC12F635ESS
подробное описание детали  PIC12F635/PIC16F636/639 Data Sheet
PDF  234 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC12F635ESS датащи(HTML) 176 Page - Microchip Technology

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PIC12F635/PIC16F636/639
DS41232D-page 174
© 2007 Microchip Technology Inc.
15.6
DC Characteristics: PIC16F639-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
Supply Voltage
2.0V
≤ VDD ≤ 3.6V
Param
No.
Sym
Device Characteristics
Min
Typ†
Max
Units
Conditions
VDD
Note
D010
IDD
Supply Current(1,2,3)
—11
16
μA2.0
FOSC = 32.768 kHz
LP Oscillator mode
—18
28
μA3.0
D011
140
240
μA2.0
FOSC = 1 MHz
XT Oscillator mode
220
380
μA3.0
D012
260
360
μA2.0
FOSC = 4 MHz
XT Oscillator mode
420
650
μA3.0
D013
130
220
μA2.0
FOSC = 1 MHz
EC Oscillator mode
215
360
μA3.0
D014
220
340
μA2.0
FOSC = 4 MHz
EC Oscillator mode
375
550
μA3.0
D015
8
20
μA2.0
FOSC = 31 kHz
LFINTOSC mode
—16
40
μA3.0
D016
340
450
μA2.0
FOSC = 4 MHz
HFINTOSC mode
500
700
μA3.0
D017
230
400
μA2.0
FOSC = 4 MHz
EXTRC mode
400
680
μA3.0
D020
IPD
Power-down Base Current(4)
0.15
1.2
μA
2.0
WDT, BOR, Comparators,
VREF and T1OSC disabled
(excludes AFE)
0.20
1.5
μA3.0
D021
IWDT
1.2
2.2
μA2.0
WDT Current(1)
—2.0
4.0
μA3.0
D022A
IBOR
42
60
μA
3.0
BOR Current(1)
D022B
ILVD
22
28
μA
2.0
PLVD Current
—25
35
μA3.0
D023
ICMP
32
45
μA
2.0
Comparator Current(1)
—60
78
μA3.0
D024A
IVREFHS
—30
36
μA2.0
CVREF Current(1)
(high-range)
—45
55
μA3.0
D024B
IVREFLS
—39
47
μA2.0
CVREF Current(1)
(low-range)
—59
72
μA3.0
D025
IT1OSC
4.5
7.0
μA
2.0
T1OSC Current(1)
—5.0
8.0
μA3.0
D026
IACT
Active Current of AFE only
(receiving signal)
1 LC Input Channel Signal
3 LC Input Channel Signals
10
13
18
μA
μA
3.6
3.6
CS = VDD; Input = Continuous
Wave (CW);
Amplitude = 300 mVPP.
All channels enabled.
D027
ISTDBY
Standby Current of AFE only
(not receiving signal)
1 LC Input Channel Enabled
2 LC Input Channels Enabled
3 LC Input Channels Enabled
3
4
5
5
6
7
μΑ
μA
μA
3.6
3.6
3.6
CS = VDD; ALERT = VDD
D028
ISLEEP
Sleep Current of AFE only
0.2
1
μA3.6
CS = VDD; ALERT = VDD
Data in “Typ” column is at 3.0V, 25
°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note
1:
The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins
tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,
oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog
Front-End not included.
3:
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The
peripheral
Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when
calculating total current consumption.
4:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep
mode, with all I/O pins in high-impedance state and tied to VDD.



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