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PIC12F635ESS датащи(PDF) 176 Page - Microchip Technology |
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PIC12F635ESS датащи(HTML) 176 Page - Microchip Technology |
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176 / 234 page ![]() PIC12F635/PIC16F636/639 DS41232D-page 174 © 2007 Microchip Technology Inc. 15.6 DC Characteristics: PIC16F639-I (Industrial) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Supply Voltage 2.0V ≤ VDD ≤ 3.6V Param No. Sym Device Characteristics Min Typ† Max Units Conditions VDD Note D010 IDD Supply Current(1,2,3) —11 16 μA2.0 FOSC = 32.768 kHz LP Oscillator mode —18 28 μA3.0 D011 — 140 240 μA2.0 FOSC = 1 MHz XT Oscillator mode — 220 380 μA3.0 D012 — 260 360 μA2.0 FOSC = 4 MHz XT Oscillator mode — 420 650 μA3.0 D013 — 130 220 μA2.0 FOSC = 1 MHz EC Oscillator mode — 215 360 μA3.0 D014 — 220 340 μA2.0 FOSC = 4 MHz EC Oscillator mode — 375 550 μA3.0 D015 — 8 20 μA2.0 FOSC = 31 kHz LFINTOSC mode —16 40 μA3.0 D016 — 340 450 μA2.0 FOSC = 4 MHz HFINTOSC mode — 500 700 μA3.0 D017 — 230 400 μA2.0 FOSC = 4 MHz EXTRC mode — 400 680 μA3.0 D020 IPD Power-down Base Current(4) — 0.15 1.2 μA 2.0 WDT, BOR, Comparators, VREF and T1OSC disabled (excludes AFE) — 0.20 1.5 μA3.0 D021 IWDT — 1.2 2.2 μA2.0 WDT Current(1) —2.0 4.0 μA3.0 D022A IBOR — 42 60 μA 3.0 BOR Current(1) D022B ILVD — 22 28 μA 2.0 PLVD Current —25 35 μA3.0 D023 ICMP — 32 45 μA 2.0 Comparator Current(1) —60 78 μA3.0 D024A IVREFHS —30 36 μA2.0 CVREF Current(1) (high-range) —45 55 μA3.0 D024B IVREFLS —39 47 μA2.0 CVREF Current(1) (low-range) —59 72 μA3.0 D025 IT1OSC — 4.5 7.0 μA 2.0 T1OSC Current(1) —5.0 8.0 μA3.0 D026 IACT Active Current of AFE only (receiving signal) 1 LC Input Channel Signal 3 LC Input Channel Signals — — 10 13 — 18 μA μA 3.6 3.6 CS = VDD; Input = Continuous Wave (CW); Amplitude = 300 mVPP. All channels enabled. D027 ISTDBY Standby Current of AFE only (not receiving signal) 1 LC Input Channel Enabled 2 LC Input Channels Enabled 3 LC Input Channels Enabled — — — 3 4 5 5 6 7 μΑ μA μA 3.6 3.6 3.6 CS = VDD; ALERT = VDD D028 ISLEEP Sleep Current of AFE only — 0.2 1 μA3.6 CS = VDD; ALERT = VDD † Data in “Typ” column is at 3.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog Front-End not included. 3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. |
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