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PIC12F635ESS датащи(PDF) 178 Page - Microchip Technology

номер детали PIC12F635ESS
подробное описание детали  PIC12F635/PIC16F636/639 Data Sheet
PDF  234 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC12F635ESS датащи(HTML) 178 Page - Microchip Technology

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PIC12F635/PIC16F636/639
DS41232D-page 176
© 2007 Microchip Technology Inc.
VOH
Output High Voltage
D090
I/O ports
VDD – 0.7
V
IOH = -3.0 mA, VDD = 3.6V (Ind.)
D092
OSC2/CLKOUT (RC mode)
VDD – 0.7
V
IOH = -1.3 mA, VDD = 3.6V (Ind.)
IOH = -1.0 mA, VDD = 3.6V (Ext.)
Digital Output High Voltage
Analog Front-End (AFE) section
D093
LFDATA/SDIO for Analog Front-End
(AFE)
VDD – 0.5
V
IOH = -400
μA, VDD = 2.0V
Capacitive Loading Specs on
Output Pins
D100
COSC2
OSC2 pin
15*
pF
In XT, HS and LP modes when
external clock is used to drive OSC1
D101
CIO
All I/O pins
50*
pF
D102
IULP
Ultra Low-power Wake-up Current
—200
nA
Data EEPROM Memory
D120
ED
Byte Endurance
100K
1M
E/W
-40
°C ≤ TA ≤ +85°C
D120A
ED
Byte Endurance
10K
100K
E/W
+85°C
≤ TA ≤ +125°C
D121
VDRW
VDD for Read/Write
VMIN
5.5
V
Using EECON1 to read/write
VMIN = Minimum operating voltage
D122
TDEW
Erase/Write cycle time
5
6
ms
D123
TRETD
Characteristic Retention
40
Year
Provided no other specifications are
violated
D124
TREF
Number of Total Erase/Write Cycles
before Refresh(1)
1M
10M
E/W
-40
°C ≤ TA ≤ +85°C
Program Flash Memory
D130
EP
Cell Endurance
10K
100K
E/W
-40
°C ≤ TA ≤ +85°C
D130A
ED
Cell Endurance
1K
10K
E/W
+85°C
≤ TA ≤ +125°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating voltage
D132
VPEW
VDD for Erase/Write
4.5
5.5
V
D133
TPEW
Erase/Write cycle time
2
2.5
ms
D134
TRETD
Characteristic Retention
40
Year
Provided no other specifications are
violated
15.7
DC Characteristics: PIC16F639-I (Industrial) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
Supply Voltage
2.0V
≤ VDD ≤ 3.6V
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
*
These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25
°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note
1:
In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC
mode.
2:
Negative current is defined as current sourced by the pin.
3:
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating
conditions. Higher leakage current may be measured at different input voltages.
4:
See Section 9.4.1 “Using the Data EEPROM” for additional information



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