Document Number: 94542

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Revision: 12-May-10

3

FC40SA50FKP

Power MOSFET, 40 A

Vishay Semiconductors

Notes

≤ 300 μs; duty cycle ≤ 2 %

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

DIODE CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Continuous source current

(body diode)

MOSFET symbol

showing the integral reverse

p-n junction diode

--

40

A

Pulsed source current (body diode)

-

-

160

Diode forward voltage

-

-

1

V

Reverse recovery time

-

620

940

ns

Reverse recovery charge

-14

21

μC

Reverse recovery current

-

38

-

A

Forward turn-on time

S

D

G

0.01

0.1

1

10

100

1000

0.1

1

10

100

V

GS

TO P

15

10

8.0

7.0

6.0

5.5

BO TTO M 5.0

5 V

20 μs PULSE WIDTH

TJ=25°C

0.1

1

10

100

1000

0.1

1

10

100

V

GS

TO P

15

10

8.0

7.0

6.0

5.5

5.0

BOTTOM 4.5

4.5 V

20 μs PULSE

WIDTH

T150°C

0.1

1

10

100

1000

4

5

6

7

8

9

10

11

12

V

T

T

V

20μs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-60 -40 -20

0

20

40

60

80 100 120 140 160

T

V

I