FC40SA50FK datasheet(2/10 Pages) VISHAY

2 / 10 page

www.vishay.com

For technical questions within your region, please contact one of the following:

Document Number: 94542

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 12-May-10

FC40SA50FKP

Vishay Semiconductors

Power MOSFET, 40 A

Note

(1) Pulse width

≤ 300 μs; duty cycle ≤ 2 %

Notes

(1) Pulse width

≤ 300 μs; duty cycle ≤ 2 %

(2) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDSS

THERMAL RESISTANCE

PARAMETER

SYMBOL

TYP.

MAX.

UNITS

Junction to case

RthJC

-0.29

°C/W

Case to sink, flat, greased surface

RthCS

0.05

STATIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Drain to source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 250 μA

500

Breakdown voltage temperature coefficient

ΔV(BR)DSS/ΔTJ

Reference to 25 °C, ID = 1 mA

0.60

V/°C

Static drain to source on-resistance

RDS(on) (1)

VGS = 10 V, ID = 24 A

0.084

0.10

Gate threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

3.0

5.0

Drain to source leakage current

IDSS

VDS = 500 V, VGS = 0 V

VDS = 400 V, VGS = 0 V, TJ = 125 °C

μA

250

Gate to source forward leakage

IGSS

VGS = 30 V

250

Gate to source reverse leakage

VGS = - 30 V

- 250

DYNAMIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Forward transconductance

gfs

VDS = 50 V, ID = 28 A

Total gate charge

Qg (1)

ID = 40 A

VDS = 400 V

VGS = 10 V; see fig. 6 and 13

270

Gate to source charge

Qgs (1)

Gate to drain ("Miller") charge

Qgd (1)

130

Turn-on delay time

td(on) (1)

VDD = 250 V

ID = 40 A

Rg = 1.0

VGS = 10 V, see fig. 10

-25-

Rise time

tr (1)

-140

Turn-off delay time

td(off) (1)

-55-

Fall time

tf (1)

-74-

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V

f = 1.0 MHz, see fig. 5

8310

Output capacitance

Coss

-960

Reverse transfer capacitance

Crss

-120

Output capacitance

Coss

VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz

10 170

VGS = 0 V, VDS = 480 V, f = 1.0 MHz

240

Effective output capacitance

Coss eff. (2)

VGS = 0 V, VDS = 0 V to 480 V

440

FC40SA50FK датащи(PDF) 2 Page - Vishay Siliconix

FC40SA50FK датащи(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9 10

датащи скачать

ссылки URL