Document Number: 94542

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Revision: 12-May-10

5

FC40SA50FKP

Power MOSFET, 40 A

Vishay Semiconductors

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case

Fig. 12a - Maximum Avalanche Energy vs. Drain Current

Fig. 12b - Unclamped Inductive Test Circuit

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

V

DS

90 %

0.001

0.010

0.100

1.000

0.00001

0.0001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (s)

SINGLE PULSE

(THERMAL RESPONSE)

0.01

0.02

0.05

0.10

0.30

D = 0.50

Notes:

1. Duty factor D = t1/t2

2. Peak TJ=PDM x ZthJC + TC

Ri (°C/W)

τi (sec)

0.161

0.000759

0.210

0.017991

0.147

0.06094



J



J



1



1



2



2



3



3

R

1

R

1

R

2

R

2

R

3

R

3





C

Ci

i Ri

Ci=  i Ri

0

500

1000

1500

2000

2500

3000

25

50

75

100

125

150

S tarting TJ, Junc tion Tem perature (°C)

I

TOP

18A

26A

BOTTOM

40A

0.01

Ω

D.U.T

L

+

-

Driver

A

15 V

20 V

R

G

V

DS

I

AS

t

p

V

DD