FC40SA50FK datasheet(1/10 Pages) VISHAY

номер детали	FC40SA50FK

подробное описание детали	Power MOSFET, 40 A

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производитель	VISHAY [Vishay Siliconix]

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Document Number: 94542

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 12-May-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

1

Power MOSFET, 40 A

FC40SA50FKP

Vishay Semiconductors

FEATURES

• Low gate charge Qg results in simple drive

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche voltage

and current

•Low RDS(on)

• Fully insulated package

• UL pending

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

• Hard switched and high frequency circuits

Notes

(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

(2) ISD

≤ 40 A, dI/dt ≤ 150 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C

Notes

(1) Starting TJ = 25 °C, L = 1.55 mH, Rg = 25

Ω, IAS = 40 A, dV/dt = 5.5 V/ns (see fig. 12a)

(2) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

PRODUCT SUMMARY

VDSS

500 V

RDS(on) (typical)

0.084

Ω

ID

40 A

Type

Modules - MOSFET

Package

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Continuous drain current, VGS at 10 V

ID

TC = 25 °C

40

A

TC = 100 °C

26

Pulsed drain current

IDM (1)

160

Power dissipation

PD

TC = 25 °C

430

W

Linear derating factor

3.45

W/°C

Gate to source voltage

VGS

± 30

V

Peak diode recovery dV/dt

dV/dt (2)

9.0

V/ns

Operating junction and storage temperature range

TJ, TStg

- 55 to + 150

°C

AVALANCHE CHARACTERISTICS

PARAMETER

SYMBOL

TYP.

MAX.

UNITS

Single pulse avalanche energy

EAS (1)

-

1240

mJ

Avalanche current

IAR (2)

-40

A

Repetitive avalanche energy

EAR (2)

-43

mJ

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