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FC40SA50FK датащи(PDF) 7 Page - Vishay Siliconix |
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FC40SA50FK датащи(HTML) 7 Page - Vishay Siliconix |
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7 / 10 page ![]() Document Number: 94542 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 12-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7 FC40SA50FKP Power MOSFET, 40 A Vishay Semiconductors Fig. 14 - For N-Channel Power MOSFETs ORDERING INFORMATION TABLE P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * 1 - Power MOSFET 2 - Generation 6.2/6.3 MOSFET silicon DBC construction 3 - Current rating (40 = 40 A) 4 - Single switch (see Circuit Configuration table) 5 - SOT-227 6 - Voltage rating (50 = 500 V) 7 - MOSFET K speed 8 - None = Standard production P = Lead (Pb)-free Device code 5 13 24 67 8 F C 40 S A 50 FK P |
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