ST10F276Z5 datasheet(45/239 Pages) STMICROELECTRONICS

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ST10F276Z5

Internal Flash memory

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Example 2: Enable Access and Debug Protection.

FCR0H|= 0x0100;/*Set SPR in FCR0H*/

FARL = 0xDFB8;/*Load Add of register FNVAPR0 in FARL*/

FARH = 0x000E;/*Load Add of register FNVAPR0 in FARH*/

FDR0L = 0xFFFC;/*Load Data in FDR0L*/

FCR0H|= 0x8000;/*Operation start*/

Example 3: Disable in a permanent way Access and Debug Protection.

FCR0H|= 0x0100;/*Set SPR in FCR0H*/

FARL = 0xDFBC;/*Load Add of register FNVAPR1L in FARL*/

FARH = 0x000E;/*Load Add of register FNVAPR1L in FARH*/

FDR0L = 0xFFFE; /*Load Data in FDR0L for clearing PDS0*/

FCR0H|= 0x8000;/*Operation start*/

Example 4: Enable again in a permanent way Access and Debug Protection, after having

disabled them.

FCR0H|= 0x0100;/*Set SPR in FCR0H*/

FARL = 0xDFBC;/*Load Add register FNVAPR1H in FARL*/

FARH

= 0x000E;/*Load Add register FNVAPR1H in FARH*/

FDR0H = 0xFFFE;/*Load Data in FDR0H for clearing PEN0*/

FCR0H|= 0x8000;/*Operation start*/

Disable and re-enable of Access and Debug Protection in a permanent way (as shown by

examples 3 and 4) can be done for a maximum of 16 times.

4.7

Write operation summary

In general, each write operation is started through a sequence of 3 steps:

The first instruction is used to select the desired operation by setting its corresponding

selection bit in the Flash Control Register 0. This instruction is also used to select in

which Flash Module to apply the Write Operation (by setting/resetting bit SMOD).

The second step is the definition of the Address and Data for programming or the

Sectors or Banks to erase.

The last instruction is used to start the write operation, by setting the start bit WMS in

the FCR0.

Once selected, but not yet started, one operation can be canceled by resetting the operation

selection bit.

A summary of the available Flash Module Write Operations are shown in the following

Table 28.

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