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5000 датащи(PDF) 81 Page - Intel Corporation

номер детали 5000
подробное описание детали  Dual-Core Intel Xeon Processor
PDF  104 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

5000 датащи(HTML) 81 Page - Intel Corporation

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Dual-Core Intel® Xeon® Processor 5000 Series Datasheet
81
Thermal Specifications
.
Notes:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
2.
Same as IFW in the diode model in Table 6-9.
3.
Characterized across a temperature range of 50-80°C.
4.
Not 100% tested. Specified by design characterization.
5.
The ideality factor, nQ, represents the deviation from ideal transistor model behavior as exemplified by the
equation for the collector current: IC = IS * (eqVBE/nQkT - 1)
Where IS = saturation current, q = electronic charge, VBE = voltage across the transistor based emitter
junction (same nodes as VD ), k = Boltzmann Constant, and T = absolute temperature (Kelvin).
6.
The series resistance, RT provided in Table 6-9 can be used for more accurate readings as needed.
Notes:
1.
See the Dual-Core Intel® Xeon® Processor 5000 Series Thermal/Mechanical Design Guidelines for more
information on how to use the Tdiode_Offset, Tdiode_Base and ntrim parameters for fan speed control.
§
Table 6-10. Thermal Diode Interface
Land Name
Land Number
Description
THERMDA
AL1
diode anode
THERMDC
AK1
diode cathode
THERMDA2
AJ7
diode anode
THERMDC2
AH7
diode cathode
Table 6-11. Thermal Diode Parameters using Transistor Model
Symbol
Parameter
Min
Typ
Max
Unit
Notes
IFW
Forward Bias Current
5
-
200
µA
1, 2
IE
Emitter Current
5
-
200
µA
nQ
Transistor Ideality
0.997
1.001
1.005
-
3, 4, 5
Beta
-
0.391
-
0.760
-
3, 4
RT
Series Resistance
2.79
4.52
6.24
Ω
3, 6
Table 6-12. Parameters for Tdiode Correction Factor
Symbol
Parameter
Typ
Unit
Notes
ntrim
Diode Ideality used to calculate
Tdiode_Offset
1.008
1
Tdiode_Base
0
°C
1



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