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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KM416RD8ACD-RK80 датащи(PDF) 34 Page - Samsung semiconductor |
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KM416RD8ACD-RK80 датащи(HTML) 34 Page - Samsung semiconductor |
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34 / 64 page  Page 31 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Rev. 1.01 Oct. 1999 . . 04516 NAPX NAPXA read-write, 5 bits NAP exit. Specifies length of NAP exit phase A. NAPX read-write, 5 bits NAP exit. Specifies length of NAP exit phase A + phase B. DQS read-write, 1 bits DQ select. Selects CMD framing for NAP/PDN exit. 04616 PDNXA PDNXA read-write, 13 bits PDN exit. Specifies length of PDN exit phase A. 04716 PDNX PDNX read-write, 13 bits PDN exit. Specifies length of PDN exit phase A + phase B. 04816 TPARM TCAS read-write, 2 bits tCAS-C core parameter. Determines tOFFP datasheet parameter. TCLS read-write, 2 bits tCLS-C core parameter. Determines tCAC and tOFFP parameters. TCDLY0 read-write, 3 bits tCDLY0-C core parameter. Programmable delay for read data. 04916 TFRM TFRM read-write, 4 bits tFRM-C core parameter. Determines ROW-COL packet framing interval. 04a16 TCDLY1 TCDLY1 read-write, 3 bits tCDLY1-C core parameter. Programmable delay for read data. 04b16 SKIP AS read, 1 bit Auto Skip value established by the SETF command. MSE read-write, 1 bit Manual Skip Enable. Allows the MS value to override the AS value. MS read-write, 1 bit Manual Skip value. 04c16 TCYCLE TCYCLE read-write, 14 bits tCYCLE datasheet parameter. Specifies cycle time in 64ps units. 04d16 TEST77 TEST77 read-write, 16 bits Test register. Write with zero after SIO reset. 04e16 TEST78 TEST78 read-write, 16 bits Test register. Do not read or write after SIO reset. 04f16 TEST79 TEST79 read-write, 16 bits Test register. Do not read or write after SIO reset. 08016 - 0ff16 reserved reserved vendor-specific Vendor-specific test registers. Do not read or write after SIO reset. Table 16: Control Register Summary SA11..SA0 Register Field read-write/ read-only Description |
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