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KM416RD8ACD-RK80 датащи(PDF) 3 Page - Samsung semiconductor

номер детали KM416RD8ACD-RK80
подробное описание детали  128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
PDF  64 Pages
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производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8ACD-RK80 датащи(HTML) 3 Page - Samsung semiconductor

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KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM™
Rev. 1.01 Oct. 1999
KM 4 XX XX XX X X - X X XX
1
2
3
4
5
6
7
8
SAMSUNG Memory
Device
Organization
Product
Speed
Package Type
Revision
Density
1. SAMSUNG Memory
2. Device
3. Organization
4. Product
6. Revision
7. Package Type
10. Speed
5. Density
9
9. tRAC(Row Access Time)
tRAC(Row Access Time)
8. Power & Refresh
10
Power & Refresh
ORDERING INFORMATION
- 4 : DRAM
- 16 : x16 bit
- 18 : x18 bit
- RD : Direct RAMBUS DRAM
- 2 : 2M
- 4 : 4M
- 8 : 8M
- 16 : 16M
- 32 : 32M
- Blank : 1st Gen.
- A
: 2nd Gen.
- C : u - BGA(Normal CSP)
- D : u - BGA(Mirrored CSP)
- Blank : Normal Power Self Refesh(32m/8K, 3.9us)
- L
: Low Power Self Refesh(32m/8K, 3.9us)
- R
: Normal Power Self Refesh(32m/16K, 1.9us)
- S
: Low Power Self Refesh(32m/16K, 1.9us)
- DS : for Daisy Chain Sample
- 60 : 600Mbps (300MHz)
- 70 : 711Mbps (356MHz)
- 80 : 800Mbps (400MHz)
- Blank : for Daisy Chain Sample
- G
: 53.3ns
- K
: 45ns
- M
: 40ns
- B~D, F, J, L, N~ : Reserved



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