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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KM416RD8ACD-RK80 датащи(PDF) 22 Page - Samsung semiconductor |
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KM416RD8ACD-RK80 датащи(HTML) 22 Page - Samsung semiconductor |
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22 / 64 page  Page 19 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Rev. 1.01 Oct. 1999 Figure 14: Offsets for Alternate Precharge Mechanisms CTM/CFM DQA8..0 DQB8..0 COL4 ..COL0 ROW2 ..ROW0 T0 T4 T8 T12 T1 T5 T9 T13 T2 T6 T10 T14 T3 T7 T11 T15 T16 T20 T24 T28 T17 T21 T25 T29 T18 T22 T26 T30 T19 T23 T27 T31 T32 T36 T40 T44 T33 T37 T41 T45 T34 T38 T42 T46 T35 T39 T43 T47 CTM/CFM DQA8..0 DQB8..0 COL4 ..COL0 ROW2 ..ROW0 T0 T4 T8 T12 T1 T5 T9 T13 T2 T6 T10 T14 T3 T7 T11 T15 T16 T20 T24 T28 T17 T21 T25 T29 T18 T22 T26 T30 T19 T23 T27 T31 T32 T36 T40 T44 T33 T37 T41 T45 T34 T38 T42 T46 T35 T39 T43 T47 CTM/CFM DQA8..0 DQB8..0 COL4 ..COL0 ROW2 ..ROW0 T0 T4 T8 T12 T1 T5 T9 T13 T2 T6 T10 T14 T3 T7 T11 T15 T16 T20 T24 T28 T17 T21 T25 T29 T18 T22 T26 T30 T19 T23 T27 T31 T32 T36 T40 T44 T33 T37 T41 T45 T34 T38 T42 T46 T35 T39 T43 T47 RD a1 ACT a0 RD a2 Q (a2) Q (a1) ACT b0 MSK (a2) MSK (a1) retire (a1) tOFFP WR a1 D (a2) D (a1) ACT b0 ACT a0 Transaction a: RD a0 = {Da,Ba,Ra} a5 = {Da,Ba} COLC Packet: RDA Precharge Offset COLC Packet: WDA Precharge Offset Transaction a: WR a0 = {Da,Ba,Ra} a1 = {Da,Ba,Ca1} a2 = {Da,Ba,Ca2} a5 = {Da,Ba} COLX Packet: PREX Precharge Offset RD a3 Q (a4) Q (a3) RDA a4 PRER a5 The RDA precharge is equivalent to a PRER command here tOFFP PRER a5 The WRA precharge (triggered by the automatic retire) is equivalent to a PRER command here WRA a2 retire (a2) tRTR a3 = {Da,Ba,Ca3} a4 = {Da,Ba,Ca4} a1 = {Da,Ba,Ca1} a2 = {Da,Ba,Ca2} RD a1 ACT a0 RD a2 Q (a2) Q (a1) ACT b0 tOFFP Transaction a: RD a0 = {Da,Ba,Ra} a5 = {Da,Ba} RD a3 Q (a4) Q (a3) PRER a5 The PREX precharge command is equivalent to a PRER command here a3 = {Da,Ba,Ca3} a4 = {Da,Ba,Ca4} a1 = {Da,Ba,Ca1} a2 = {Da,Ba,Ca2} RD a4 PREX a5 |
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