KM416RD8ACD-RK80 datasheet(4/64 Pages) SAMSUNG

4 / 64 page

Page 1

KM416RD8AC(D)/KM418RD8AC(D)

Direct RDRAM™

Rev. 1.01 Oct. 1999

Overview

The Rambus Direct RDRAM™ is a general purpose high-

performance memory device suitable for use in a broad

range of applications including computer memory, graphics,

video, and any other application where high bandwidth and

low latency are required.

The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are

extremely high-speed CMOS DRAMs organized as 8M

words by 16 or 18 bits. The use of Rambus Signaling Level

(RSL) technology permits 600MHz to 800MHz transfer

rates while using conventional system and board design

technologies. Direct RDRAM devices are capable of

sustained data transfers at 1.25 ns per two bytes (10ns per

sixteen bytes).

The architecture of the Direct RDRAMs allows the highest

sustained bandwidth for multiple, simultaneous randomly

addressed memory transactions. The separate control and

data buses with independent row and column control yield

over 95% bus efficiency. The Direct RDRAM's thirty-two

banks support up to four simultaneous transactions.

System oriented features for mobile, graphics and large

memory systems include power management, byte masking,

and x18 organization. The two data bits in the x18 organiza-

tion are general and can be used for additional storage and

bandwidth or for error correction.

Features

♦ Highest sustained bandwidth per DRAM device

- 1.6GB/s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 32 banks: four transactions can take place simul-

taneously at full bandwidth data rates

♦ Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

♦ Advanced power management:

- Direct RDRAM operates from a 2.5 volt supply

- Multiple low power states allows flexibility in power

consumption versus time to transition to active state

- Power-down self-refresh

♦ Organization: 1Kbyte pages and 32 banks, x 16/18

- x18 organization allows ECC configurations or

increased storage/bandwidth

- x16 organization for low cost applications

♦ Uses Rambus Signaling Level (RSL) for up to 800MHz

operation

The 128/144-Mbit Direct RDRAMs are offered in a CSP

horizontal package suitable for desktop as well as low-

profile add-in card and mobile applications.

Key Timing Parameters/Part Numbers

a.The “32s"designation indicates that this RDRAM core is composed of 32

banks which use a "split" bank architecture.

b.The “C“ designator indicates the normal package and the “D“ indicates the

mirrored package.

c.The “R“ designator indicates that this RDRAM core uses Normal Power

Self Refresh.

Figure 1: Direct RDRAM CSP Package

Organization

Speed

Part Number

Bin

I/O

Freq.

MHz

tRAC (Row

Access

Time) ns

256Kx16x32sa -RG60

600

53.3

KM416RD8AC(Db)-RcG60

-RK70

711

KM416RD8AC(D)-RK70

-RK80

800

KM416RD8AC(D)-RK80

256Kx18x32s

-RG60

600

53.3

KM418RD8AC(D)-RG60

-RK70

711

KM418RD8AC(D)-RK70

-RK80

800

KM418RD8AC(D)-RK80

SEC KOREA

KM4xxRD8AC

SEC KOREA

KM4xxRD8AD

a. Normal Package

b. Mirrored Package

KM416RD8ACD-RK80 датащи(PDF) 4 Page - Samsung semiconductor

KM416RD8ACD-RK80 датащи(HTML) 4 Page - Samsung semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64

датащи скачать

ссылки URL