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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HT82K75REW датащи(PDF) 6 Page - Holtek Semiconductor Inc |
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HT82K75REW датащи(HTML) 6 Page - Holtek Semiconductor Inc |
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6 / 103 page  D.C. Characteristics for EEPROM Memory Ta= -40°C~85°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Conditions ICC1* Operating Current 3V Read at 100kHz ¾¾ 1mA ICC2* Operating Current 3V Write at 100kHz ¾¾ 3mA ISTB* Standby Current 3V VIN=0 or VCC ¾¾ 3 mA Note: ²*² The operating current ICC1 and ICC2 listed here are the additional currents consumed when the EEPROM Memory operates in Read Operation and Write Operation respectively. If the EEPROM is operating, the ICC1 or ICC2 should be added to calculate the relevant operating current of the device for different conditions. To calculate the standby current for the whole device, the standby current shown above should also be taken into account. A.C. Characteristics Ta= -40°C~85°C Symbol Parameter Remark Standard Mode* Unit Min. Max. fSK SCL Clock Frequency ¾¾ 100 kHz tHIGH Clock High Time ¾ 4000 ¾ ns tLOW Clock Low Time ¾ 4700 ¾ ns tr SDA and SCL Rise Time Note ¾ 1000 ns tf SDA and SCL Fall Time Note ¾ 300 ns tHD:STA START Condition Hold Time After this period the first clock pulse is generated 4000 ¾ ns tSU:STA START Condition Setup Time Only relevant for repeated START condition 4000 ¾ ns tHD:DAT Data Input Hold Time ¾ 0 ¾ ns tSU:DAT Data Input Setup Time ¾ 200 ¾ ns tSU:STO STOP Condition Setup Time ¾ 4000 ¾ ns tAA Output Valid from Clock ¾¾ 3500 ns tBUF Bus Free Time Time in which the bus must be free before a new transmission can start 4700 ¾ ns tSP Input Filter Time Constant (SDA and SCL Pins) Noise suppression time ¾ 100 ns tWR Write Cycle Time ¾¾ 5ms Note: These parameters are periodically sampled but not 100% tested * The standard mode means VCC=2.2V to 3.6V For relative timing, refer to timing diagrams HT82M75REW/HT82K75REW Rev. 1.00 6 June 11, 2010 |
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