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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HT82K75REW датащи(PDF) 5 Page - Holtek Semiconductor Inc |
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HT82K75REW датащи(HTML) 5 Page - Holtek Semiconductor Inc |
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5 / 103 page  Pin Name Type Description SI I Internal RF Transceiver Slave SPI Serial Data Input Signal Internally connected to the MCU Master SPI SDO output signal SO O Internal RF Transceiver Slave SPI Serial Data Output Signal Internally connected to the MCU Master SPI SDI input signal SCLK I Internal RF Transceiver Slave SPI Serial Clock Input Signal Internally connected to the MCU Master SPI SCK output signal SEN I Internal RF Transceiver Slave SPI Serial interface Enable Input Signal Internally connected to the MCU Master SPI SCS output signal INT I Internal RF Transceiver Interrupt Output Signal Internally connected to the MCU INT input signal RST I Internal RF Transceiver global hardware reset input signal, active low. Internally connected to the MCU I/O pin configured as output type. NC ¾ Implies that the pin is ²Not Connected² and can therefore not be used. Notes: (1) Connecting bypass capacitor(s) as close to the pin as possible. (2) The pin descriptions for all external pins except the RF Transceiver pins listed in the above table are de- scribed in the preceding MCU section. (3) The INT and RST lines are internally connected to the MCU I/O pins PC2 and PC3 respectively for the HT82M75REW and HT82K75REW devices. Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C IOL Total ..............................................................150mA IOH Total............................................................ -100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VBAT BAT_IN Operating Voltage ¾¾ 1.8 2.2 3.3 V IDD Operating Current (Crystal OSC) 3V No load, fSYS= 6MHz ¾ 36 mA ISTB Standby Current ¾ No load, system HALT WDT disable, LVR disable ¾¾ 20 mA VIL1 Input Low Voltage for I/O (Schmitt Trigger) ¾¾ 0 ¾ 0.3VDD V VIH1 Input High Voltage for I/O (Schmitt Trigger) ¾¾ 0.7VDD ¾ VDD V VIL2 Input Low Voltage (RES) ¾¾ 0 ¾ 0.3VDD V VIH2 Input High Voltage (RES) ¾¾ 0.9VDD ¾ VDD V IOL1 Other I/O Pins Sink Current 3V VOL=0.1VDD 4 ¾¾ mA IOH1 Other I/O Pins Source Current 3V VOH=0.9VDD -2.5 -4.5 ¾ mA RPH1 Other Pins Internal Pull-high Resistance 3V ¾ 10 30 50 k W HT82M75REW/HT82K75REW Rev. 1.00 5 June 11, 2010 |
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