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MPC5121E датащи(PDF) 33 Page - Freescale Semiconductor, Inc |
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MPC5121E датащи(HTML) 33 Page - Freescale Semiconductor, Inc |
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33 / 86 page ![]() Electrical and Thermal Characteristics MPC5121E/MPC5123 Data Sheet, Rev. 4 Freescale Semiconductor 33 3.3.5.1 DDR and DDR2 SDRAM AC Timing Specifications Notes: 1. Measured with clock pin loaded with differential 100 ohm termination resistor. 2. Measured with all outputs except the clock loaded with 50 ohm termination resistor to VDD_MEM_IO/2. 3. All transitions measured at mid-supply (VDD_MEM_IO/2). 4. In this window, the first rising edge of DQS should occur. From the start of the window to DQS rising edge, DQS should be low. 5. Window position is given for tDQSEN = 2.0 tCK. For other values of tDQSEN, window position is shifted accordingly. Figure 8 shows the DDR SDRAM write timing. Figure 8. DDR Write Timing Table 20. DDR and DDR2 (DDR2-400) SDRAM Timing Specifications At recommended operating conditions with VDD_MEM_IO of ±5% Parameter Symbol Min Max Unit Notes SpecID Clock cycle time, CL=x tCK 5000 — ps A5.1 MCK AC differential crosspoint voltage VIX-AC VDD_MEM_IO ×0.5 –0.1 VDD_MEM_IO ×0.5 +0.1 V1 A5.2 CK HIGH pulse width tCH 0.47 0.53 tCK 1,3 A5.3 CK LOW pulse width tCL 0.47 0.53 tCK 1,3 A5.4 Skew between MCK and DQS transitions tDQSS −0.25 0.25 tCK 2,3 A5.5 Address and control output setup time relative to MCK rising edge tOS(base) (tCK/2 – 750) — ps 2,3 A5.6 Address and control output hold time relative to MCK rising edge tOH(base) (tCK/2 – 750) — ps 2,3 A5.7 DQ and DM output setup time relative to DQS tDS1(base) (tCK/4 – 500) — ps 2,3 A5.8 DQ and DM output hold time relative to DQS tDH1(base) (tCK/4 – 500) — ps 2,3 A5.9 DQS-DQ skew for DQS and associated DQ inputs tDQSQ –(tCK/4–600) (tCK/4 – 600) ps 3 A5.10 DQS window start position related to CAS read command tDQSEN TBD TBD ps 1,2,3,4,5 A5.11 MCK tCH tCL DQS tDQSS DQ, DM(out) tDS tDH tCK |
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