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MPC5121E датащи(PDF) 22 Page - Freescale Semiconductor, Inc |
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MPC5121E датащи(HTML) 22 Page - Freescale Semiconductor, Inc |
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22 / 86 page ![]() MPC5121E/MPC5123 Data Sheet, Rev. 4 Electrical and Thermal Characteristics Freescale Semiconductor 22 1 Notes: 1. General IO – Rise and Fall Times at Drive load 50pF. 2. PCI – Rise and Fall Times at Drive load 10pF. 3. DDR – for LPDDR/Mobile-DDR, slew rate is measured between 20% of VDD_MEM_IO and 80% of VDD_MEM_IO. 4. DDR – for DDR, DDR2, rising signals, slew rate is measured between VDD_MEM_IO × 0.5 and ViHAC. For falling signals, slew rate is measured between VDD_MEM_IO × 0.5 and ViLAC. 5. DDR – Rise and Fall Times terminated at the destination with 50 ohm to MVTT (0.5 × VDD_MEM_IO), with 4 pF representing the DDR input capacitance. 7 See Table 7 for the typical drive capability of a specific signal pin based on the type of output driver associated with that pin as listed in Table 3. 8 All injection current is transferred to V DD_IO/VDD_MEM_IO. An external load is required to dissipate this current to maintain the power supply within the specified voltage range. Total injection current for all digital input-only and all digital input/output pins must not exceed 10 mA. Exceeding this limit can cause disruption of normal operation. Table 7. I/O Pads—Drive Current, Slew Rate Pad Type Supply Voltage Drive Select/Slew Rate Control Rise time max (ns) Fall time max (ns) Current Ioh (mA) Current Iol (mA) SpecID General IO VDD_IO = 3.3V configuration 3 (11) 1.4 1.6 35 35 D3.41 configuration 2 (10) 9.8 12 D3.42 configuration 1 (01) 19 24 D3.43 configuration 0 (00) 140 183 D3.44 DDR VDD_MEM_IO = 2.5V (DDR) configuration 3 (011) 2 2 16.2 16.2 D3.45 VDD_MEM_IO = 1.8V (LPDDR) configuration 0 (000) 1 1 4.6 4.6 D3.46 configuration 1 (001) 8.1 8.1 D3.47 VDD_MEM_IO = 1.8V (DDR2) configuration 2 (010) 1 1 5.3 5.3 D3.48 configuration 6 (110) 13.4 13.4 D3.49 PCI VDD_IO = 3.3V configuration 1 (1) 1.4 1.4 11 17 D3.50 configuration 0 (0) 2 2 D3.51 |
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