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TMS418160ADZ датащи(PDF) 3 Page - Texas Instruments

номер детали TMS418160ADZ
подробное описание детали  1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY
PDF  24 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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TMS418160ADZ датащи(HTML) 3 Page - Texas Instruments

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TMS418160A
1048576 BY 16-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997
3
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
functional block diagram
A0
A1
A9
32
16
16
Timing and Control
Column -
Address
Buffers
Row -
Address
Buffers
I/O
Buffers
Data-
In
Reg.
Data-
Out
Reg.
Column Decode
Sense Amplifiers
R
o
w
D
e
c
o
d
e
256K Array
256K Array
256K Array
256K Array
256K Array
256K Array
DQ0 – DQ15
RAS UCAS
W
OE
LCAS
16 of 32
Selection
32
10
10
10
32
32
operation
dual xCAS
Two xCAS pins (LCAS and UCAS) are provided to give independent control of the 16 data I/O pins
(DQ0 – DQ15), with LCAS corresponding to DQ0 – DQ7 and UCAS corresponding to DQ8 – DQ15. Each xCAS
going low enables its corresponding DQx pin.
In write cycles, data-in setup and hold time (tDS and tDH) and write-command setup and hold time (tWCS, tCWL
and tWCH) must be satisfied for each individual xCAS to ensure writing into the storage cells of the corresponding
DQ pins.
Different modes of operation for upper and lower bytes in one cycle are not allowed, such as the example shown
in Figure 1.
RAS
UCAS
LCAS
W
Delayed write
Early write
Figure 1. Illegal Dual-xCAS Operation



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