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TMS418160ADZ датащи(PDF) 17 Page - Texas Instruments

номер детали TMS418160ADZ
подробное описание детали  1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY
PDF  24 Pages
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домашняя страница  http://www.ti.com
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TMS418160ADZ датащи(HTML) 17 Page - Texas Instruments

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TMS418160A
1048576 BY 16-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997
17
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
UCAS
LCAS
Address
W
DQ8 –
DQ15
DQ0 –
DQ7
OE
tRASP
tRP
tRSH
tCRP
tPC
tCSH
tRCD
tCAS
tCP
tCAL
tRAL
tCAH
tASR
tRAH
tRAD
tCWL
tCWL
tRWL
tDH
tDS
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Column
Column
Valid In
Valid In
Valid In
Row
tCLCH
tASC
tWCH
tRHCP
(see Note A)
Don’t Care
Don’t Care
tWCS
(see Note D)
(see Note D)
(see Note E)
(see Note E)
(see Note F)
tCAS
NOTES: A. To hold the address latched by the first xCAS going low, the parameter tCLCH must be met.
B. A read cycle or read-modify-write cycle can be mixed with the write cycles as long as the read- and read-modify-write timing
specifications are not violated.
C. xCAS order is arbitrary.
D. tWCS and tWCH must be satisfied for each xCAS.
E. tDS and tDH for a DQ is referenced to the corresponding xCAS.
F. tCWL must be satisfied for each xCAS.
Figure 9. Enhanced-Page-Mode Early Write-Cycle Timing



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