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TMS418160ADZ датащи(PDF) 13 Page - Texas Instruments |
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TMS418160ADZ датащи(HTML) 13 Page - Texas Instruments |
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13 / 24 page ![]() TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 13 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS UCAS LCAS Address W DQ8 – DQ15 OE tWC tRAS tT tRCD tCRP tRP tCP tASR tRAD tRAH tASC tWCS tWP tDS Valid Data In Row Column Don’t Care Don’t Care tCAS tRSH Don’t Care tCWL tCLCH (see Note A) Don’t Care DQ0 – DQ7 tDH tDS Valid Data In Don’t Care tCSH tCAL tRAL tDH tRWL tCAH tWCH tWCS (see Note C) (see Note C) tWCH (see Note C) Don’t Care Don’t Care Don’t Care (see Note D) (see Note D) (see Note D) (See Note C) (see Note E) tCAS See Note E NOTES: A. To hold the address latched by the first xCAS going low, the parameter tCLCH must be met. B. xCAS order is arbitrary. C. tWCS and tWCH must be satisfied for each xCAS. D. tDS and tDH of a DQ input are referenced to the corresponding xCAS. E. tCWL must be satisfied for each xCAS to write properly to each byte. Figure 5. Early-Write-Cycle Timing |
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