TMS418160A

1048576 BY 16-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997

8

POST OFFICE BOX 1443

switching characteristics over recommended ranges of supply voltage and ambient temperature

(see Note 4)

PARAMETER

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UNIT

PARAMETER

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

tAA

Access time from column address

25

30

35

ns

tCAC

Access time from xCAS

13

15

18

ns

tCPA

Access time from xCAS precharge

30

35

40

ns

tRAC

Access time from RAS

50

60

70

ns

tOEA

Access time from OE

13

15

18

ns

tCLZ

Delay time, xCAS to output in the low-impedance state

0

0

0

ns

tOH

Output data hold time from xCAS

3

3

3

ns

tOHO

Output data hold time from OE

3

3

3

ns

tOFF

Output buffer turn-off delay from xCAS (see Note 5)

0

13

0

15

0

18

ns

tOEZ

Output buffer turn-off delay from OE (see Note 5)

0

13

0

15

0

18

ns

NOTES:

4. With ac parameters, it is assumed that tT = 5 ns.

5. tOFF and tOEZ are specified when the output is no longer driven. Data-in should not be enabled until one of the applicable maximum

specifications is satsified.

ac timing requirements (see Note 4)

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UNIT

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

tRC

Cycle time, read

90

110

130

ns

tWC

Cycle time, write

90

110

130

ns

tRWC

Cycle time, read-write

131

155

181

ns

tPC

Cycle time, page-mode read or write (see Note 6)

35

40

45

ns

tPRWC

Cycle time, page-mode read-write

76

85

96

ns

tRASP

Pulse duration, RAS active, page mode (see Note 7)

50

100 000

60

100 000

70

100 000

ns

tRAS

Pulse duration, RAS active, nonpage mode (see Note 7)

50

10 000

60

10 000

70

10 000

ns

tCAS

Pulse duration, xCAS active (see Note 8)

13

10 000

15

10 000

18

10 000

ns

tRP

Pulse duration, RAS (precharge)

30

40

50

ns

tWP

Pulse duration, write command

10

10

10

ns

tASC

Setup time, column address

0

0

0

ns

tASR

Setup time, row address

0

0

0

ns

tDS

Setup time, data-in (see Note 9)

0

0

0

ns

tRCS

Setup time, read command

0

0

0

ns

tCWL

Setup time, write command before xCAS precharge

13

15

18

ns

tRWL

Setup time, write command before RAS precharge

13

15

18

ns

tWCS

Setup time, write command before xCAS active

(early-write only)

0

0

0

ns

tWRP

Setup time, write before RAS active (CBR refresh only)

10

10

10

ns

NOTES:

4. With ac parameters, it is assumed that tT = 5 ns.

6. To assure tPC min, tASC should be ≥ to tCP .

7. In a read-write cycle, tRWD and tRWL must be observed.

8. In a read-write cycle, tCWD and tCWL must be observed.

9. Referenced to the later of xCAS or W in write operations