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4513 датащи(PDF) 102 Page - Renesas Technology Corp |
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4513 датащи(HTML) 102 Page - Renesas Technology Corp |
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102 / 210 page ![]() 4513/4514 Group User’s Manual HARDWARE 1-89 Fig. 52 Flow of writing and test of the product shipped in blank Fig. 51 PROM memory map (1) PROM mode The built-in PROM version has a PROM mode in addition to a nor- mal operation mode. The PROM mode is used to write to and read from the built-in PROM. In the PROM mode, the programming adapter can be used with a general-purpose PROM programmer to write to or read from the built-in PROM as if it were M5M27C256K. Programming adapters are listed in Table 26.Contact addresses at the end of this sheet for the appropriate PROM programmer. • Writing and reading of built-in PROM Programming voltage is 12.5 V. Write the program in the PROM of the built-in PROM version as shown in Figure 51. (2) Notes on handling A high-voltage is used for writing. Take care that overvoltage is not applied. Take care especially at turning on the power. For the One Time PROM version shipped in blank, Mitsubishi Electric corp. does not perform PROM writing test and screening in the assembly process and following processes. In order to im- prove reliability after writing, performing writing and test according to the flow shown in Figure 52 before using is recom- mended (Products shipped in blank: PROM contents is not written in factory when shipped). Table 26 Programming adapters Microcomputer M34513E4SP M34513E4FP, M34513E8FP M34514E8FP Programming adapter PCA7442SP PCA7442FP PCA7441 Address 000016 1FFF16 400016 5FFF16 7FFF16 1 11 D4 D3 D2 D1 D0 High-order 5 bits 1 11 D4 D3 D2 D1 D0 Low-order 5 bits Set “FF16” to the shaded area. Writing with PROM programmer Screening (Leave at 150 °C for 40 hours) (Note) Verify test with PROM programmer Function test in target device Since the screening temperature is higher than storage temperature, never expose the microcomputer to 150 °C exceeding 100 hours. Note: BUILT-IN PROM VERSIONS |
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