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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PM6681ATR датащи(PDF) 33 Page - STMicroelectronics |
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PM6681ATR датащи(HTML) 33 Page - STMicroelectronics |
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33 / 47 page  PM6681A Design guidelines 33/47 Maximum conduction losses are approximately: Equation 20 where RDS(on) is the drain-source on resistance of the high side MOSFET. Switching losses are approximately: Equation 21 where ton and toff are the switching times of the turn off and turn off phases of the MOSFET. As general rule, high side MOSFETs with low gate charge are recommended, in order to minimize driver losses. Below there is a list of possible choices for the high side MOSFET. The power dissipation of the low side MOSFET is given by: Equation 22 Maximum conduction losses occur at the maximum input voltage: Equation 23 Choose a synchronous rectifier with low RDS(on). When high side MOSFET turns on, the fast variation of the phase node voltage can bring up even the low side gate through its gate drain capacitance CRSS, causing cross-conduction problems. Choose a low side MOSFET that minimizes the ratio CRSS/CGS (CGS = CISS - CRSS). Below there is a list of some possible low side MOSFETs. Table 14. High side MOSFET manufacturer Manufacturer Type Gate charge (nC) Rated reverse voltage (V) ST STS12NH3LL 10 30 ST STS17NH3LL 18 30 2 LOAD min IN OUT DSon conduction (max) I V V R P × × = 2 f t ) 2 I (max) I ( V 2 f t ) 2 I (max) I ( V P sw off L LOAD IN sw on L LOAD IN switching × × ∆ + × + × × ∆ − × = conduction DLowSide P P = 2 LOAD max IN OUT DSon conduction (max) I V V 1 R P × ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − × = |
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