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CMV300 датащи(PDF) 16 Page - ams-OSRAM AG

номер детали CMV300
подробное описание детали  VGA resolution CMOS image sensor
PDF  56 Pages
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производитель  AMSOSRAM [ams-OSRAM AG]
домашняя страница  https://ams-osram.com/
Logo AMSOSRAM - ams-OSRAM AG

CMV300 датащи(HTML) 16 Page - ams-OSRAM AG

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Reference:CMV300-datasheet-v2.11
CMV300 Datasheet
Page 14 of 54
© 2016 CMOSIS bvba
Pin name
Description
T_EXP1
Input pin which can be used to program the exposure
time externally. This signal should be at least one
period of CLK_IN long to assure detection.
T_EXP2
Input pin which can be used to program the exposure
time externally in interleaved high dynamic range
mode. This signal should be at least one period of
CLK_IN long to assure detection.
3.4 ELECTRICAL IO SPECIFICATIONS
3.4.1 DIGITAL IO CMOS/TTL DC SPECIFICATIONS
Parameter
Description
Conditions
min
typ
max
Units
VIH
High level input
voltage
2.0
VDD33
V
VIL
Low level input
voltage
GND
0.8
V
VOH
High level
output voltage
VDD=3.3V
IOH=-2mA
2.4
V
VOL
Low level output
voltage
VDD=3.3V
IOL=2mA
0.4
V
3.4.2 PARALLEL CMOS OUTPUT DC SPECIFICATIONS
Parameter
Description
Conditions
min
typ
max
Units
VOH
High level
output voltage
VDD20=2.2V
IOH=-2mA
2.0
V
VOL
Low level output
voltage
VDD20=2.2V
IOL=2mA
0.2
V
3.4.3 LVDS RECEIVER SPECIFICATIONS
Parameter
Description
Conditions
min
typ
max
Units
VID
Differential
input voltage
Steady state
100
350
600
mV
VIC
Receiver
input range
Steady state
0.0
2.4
V
IID
Receiver
input current
VINP|INN=1.2V±50mV,
0≤ VINP|INN≤2.4V
20
µA
∆IID
Receiver
input current
difference
|IINP – IINN|
6
µA
3.4.4 LVDS DRIVER SPECIFICATIONS
Parameter
Description
Conditions
min
typ
max
Units
VOD
Differential
output voltage
Steady State, RL
= 100Ω
247
350
454
mV
∆VOD
Difference in
VOD between
complementary
output states
Steady State, RL
= 100Ω
50
mV
VOC
Common mode
voltage
Steady State, RL
= 100Ω
1.125
1.25
1.375
V



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