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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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RA4E1 датащи(PDF) 65 Page - Renesas Technology Corp |
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RA4E1 датащи(HTML) 65 Page - Renesas Technology Corp |
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65 / 81 page  FACI command FSTATR.FRDY Programming pulse • Suspension during programming FACI command FSTATR.FRDY Erasure pulse • Suspension during erasure in suspend priority mode FACI command FSTATR.FRDY Erasure pulse • Suspension during erasure in erasure priority mode Program Suspend Ready Not Ready Ready Programming tSPD Erase Suspend Ready Not Ready Ready tSEED Erasing Erase Suspend Resume Suspend Ready Not Ready Ready Not Ready tSESD1 tSESD2 Erasing Erasing tFD • Forced Stop FACI command FSTATR.FRDY Forced Stop Not Ready Ready Resume tPRT Programming Resume tREST1 Ready Not Ready tREST2 Erasing Resume Not Ready tREET Erasing Figure 2.55 Suspension and forced stop timing for flash memory programming and erasure 2.10.2 Data Flash Memory Characteristics Table 2.41 Data flash memory characteristics (1 of 2) Conditions: Program or erase: FCLK = 4 to 50 MHz Read: FCLK ≤ 50 MHz Parameter Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Test conditions Min Typ*6 Max Min Typ*6 Max Programming time 4-byte tDP4 — 0.36 3.8 — 0.16 1.7 ms 8-byte tDP8 — 0.38 4.0 — 0.17 1.8 16-byte tDP16 — 0.42 4.5 — 0.19 2.0 Erasure time 64-byte tDE64 — 3.1 18 — 1.7 10 ms 128-byte tDE128 — 4.7 27 — 2.6 15 256-byte tDE256 — 8.9 50 — 4.9 28 Blank check time 4-byte tDBC4 — — 84 — — 30 µs Reprogramming/erasure cycle*1 NDPEC 125000*2 — — 125000*2 — — — Suspend delay during programming 4-byte tDSPD — — 264 — — 120 µs 8-byte — — 264 — — 120 16-byte — — 264 — — 120 Programming resume time tDPRT — — 110 — — 50 µs First suspend delay during erasure in suspend priority mode 64-byte tDSESD1 — — 216 — — 120 µs 128-byte — — 216 — — 120 256-byte — — 216 — — 120 RA4E1 Datasheet 2. Electrical Characteristics R01DS0391EJ0130 Rev.1.30 Jun 6, 2025 Page 65 of 81 |
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