RA4E1 datasheet(63/81 Pages) RENESAS

номер детали	RA4E1

подробное описание детали	Renesas Microcontrollers

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VCC

tVOFFBATT

VDETBATT

VBATTSW

VBATT

VCC supply

VBATT supply

VCC supply

Backup power

area

Figure 2.53

Battery backup function characteristics

VBATT

tBATTOFF

Vbattldet

VBATTMON

tBATTdet

VBATTMNSEL

td(E-A)

Figure 2.54

Battery backup function characteristics

2.10

Flash Memory Characteristics

2.10.1

Code Flash Memory Characteristics

Table 2.40

Code flash memory characteristics (1 of 2)

Conditions: Program or erase: FCLK = 4 to 50 MHz

Read: FCLK ≤ 50 MHz

Parameter

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 50 MHz

Unit

Test

conditions

Min

Typ*6 Max Min

Typ*6

Max

Programming time

NPEC ≤ 100 times

128-byte

tP128

—

0.75

13.2 —

0.34

6.0

8-KB

tP8K

—

176

—

32-KB

tP32K

—

194

704

—

320

Programming time

NPEC > 100 times

128-byte

tP128

—

0.91

15.8 —

0.41

7.2

8-KB

tP8K

—

212

—

32-KB

tP32K

—

234

848

—

106

384

Erasure time

NPEC ≤ 100 times

8-KB

tE8K

—

216

—

120

32-KB

tE32K

—

283

864

—

157

480

Erasure time

NPEC > 100 times

8-KB

tE8K

—

260

—

144

32-KB

tE32K

—

341

1040 —

189

576

Reprogramming/erasure cycle*4

NPEC

10000*1 —

—

10000*1

—

Times

RA4E1 Datasheet

2. Electrical Characteristics

R01DS0391EJ0130 Rev.1.30

Jun 6, 2025

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