RA4E1 datasheet(55/81 Pages) RENESAS

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USB_DP,

USB_DM

tLF

tLR

90%

10%

90%

VCRS

Figure 2.43

USB_DP and USB_DM output timing in low-speed mode

Observation

point

200 pF to

600 pF

USB_DP

USB_DM

200 pF to

600 pF

1.5 K



3.6 V



Figure 2.44

Test circuit in low-speed mode

Table 2.32

USBFS full-speed characteristics (USB_DP and USB_DM pin characteristics)

Conditions: VCC = AVCC0 = VCC_USB = VBATT = 3.0 to 3.6 V, 2.7 ≤ VREFH0/VREFH ≤ AVCC0, USBCLK = 48 MHz

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input

characteristics

Input high voltage

VIH

2.0

—

Input low voltage

VIL

—

0.8

—

Differential input sensitivity

VDI

0.2

—

| USB_DP - USB_DM |

Differential common-mode range

VCM

0.8

—

2.5

—

Output

characteristics

Output high voltage

VOH

2.8

—

3.6

IOH = –200 µA

Output low voltage

VOL

0.0

—

0.3

IOL = 2 mA

Cross-over voltage

VCRS

1.3

—

2.0

Figure 2.45

Rise time

tLR

—

Fall time

tLF

—

Rise/fall time ratio

tLR / tLF

—

111.11 %

tFR/ tFF

Output resistance

ZDRV

—

Ω

USBFS: Rs = 27 Ω included

Pull-up and

pull-down

characteristics

DM pull-up resistance in device controller

mode

Rpu

0.900

—

1.575

kΩ

During idle state

1.425

—

3.090

kΩ

During transmission and

reception

USB_DP and USB_DM pull-down

resistance in host controller mode

Rpd

14.25

—

24.80

kΩ

—

RA4E1 Datasheet

2. Electrical Characteristics

R01DS0391EJ0130 Rev.1.30

Jun 6, 2025

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