RA4E1 datasheet(56/81 Pages) RENESAS

номер детали	RA4E1

подробное описание детали	Renesas Microcontrollers

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USB_DP,

USB_DM

tFF

tFR

90%

10%

90%

VCRS

Figure 2.45

USB_DP and USB_DM output timing in full-speed mode

Observation

point

50 pF

USB_DP

USB_DM



Figure 2.46

Test circuit in full-speed mode

Table 2.33

USBFS characteristics (USB_DP and USB_DM pin characteristics)

Conditions: VCC = AVCC0 = VCC_USB = VBATT = 3.0 to 3.6 V, 2.7 ≤ VREFH0/VREFH ≤ AVCC0, USBCLK = 48 MHz

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Battery Charging

Specification

D+ sink current

IDP_SINK

—

175

µA

—

D- sink current

IDM_SINK

—

175

µA

—

DCD source current

IDP_SRC

—

µA

—

Data detection voltage

VDAT_REF

0.25

—

0.4

—

D+ source voltage

VDP_SRC

0.5

—

0.7

Output current = 250 µA

D- source voltage

VDM_SRC

0.5

—

0.7

Output current = 250 µA

2.5

ADC12 Characteristics

Table 2.34

A/D conversion characteristics for unit 0 (1 of 2)

Conditions: PCLKC = 1 to 50 MHz

Parameter

Min

Typ Max Unit Test conditions

Frequency

—

MHz —

Analog input capacitance

—

Quantization error

—

±0.5 —

LSB —

Resolution

—

Bits

—

RA4E1 Datasheet

2. Electrical Characteristics

R01DS0391EJ0130 Rev.1.30

Jun 6, 2025

Page 56 of 81

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