AT45DB321E datasheet(23/80 Pages) RENESAS

номер детали	AT45DB321E

подробное описание детали	32-Mbit DataFlash (with Extra 1-Mbits), 2.3 V Minimum SPI Serial Flash Memory

PDF	80 Pages

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производитель	RENESAS [Renesas Technology Corp]

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DS-AT45DB321E-8784 Rev. N

Page 23

9/1/23

AT45DB321E Datasheet

7.10 Chip Erase

The Chip Erase command allows the entire main memory array to be erased can be erased at one time.

To execute the Chip Erase command, a four-byte command sequence of C7h, 94h, 80h, and 9Ah must be clocked

into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into the

device, and any data clocked in after the opcode are ignored. After the last bit of the opcode sequence has been

clocked in, the CS pin must be deasserted to start the erase process. The erase operation is internally self-timed

and takes place in a time of tCE. During this time, the RDY/BUSY bit in the Status Register indicates that the

device is busy.

The Chip Erase command does not affect sectors that are protected or locked down; the contents of those sectors

remain unchanged. Only those sectors that are not protected or locked down are erased.

The WP pin can be asserted while the device is erasing, but protection is not activated until the internal erase

cycle completes.

The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If

an erase error arises, it is indicated by the EPE bit in the Status Register.

Table 4. Chip Erase Command

Figure 4. Chip Erase

Command

Byte 1

Byte 2

Byte 3

Byte 4

Chip Erase

C7h

94h

80h

9Ah

C7h

94h

80h

9Ah

Each transition represents eight bits

AT45DB321E датащи(PDF) 23 Page - Renesas Technology Corp