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AT45DB321E датащи(PDF) 1 Page - Renesas Technology Corp |
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AT45DB321E датащи(HTML) 1 Page - Renesas Technology Corp |
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1 / 80 page ![]() Datasheet DS-AT45DB321E-8784 Rev. N Page 1 9/1/23 © 2023 Renesas Electronics Features • Single 2.3 V - 3.6 V supply • Serial Peripheral Interface (SPI) compatible • Supports SPI modes 0 and 3 • Supports RapidS™ operation • Continuous read capability through entire array • Up to 85 MHz • Low-power read option up to 15 MHz • Clock-to-output time (tV) of 6ns maximum • User configurable page size • 512 bytes per page • 528 bytes per page (default) • Page size can be factory pre-configured for 512 bytes • Two fully independent SRAM data buffers (512/528 bytes) • Flexible programming options • Byte/Page Program (1 to 512/528 bytes) directly into main memory •Buffer Write • Buffer to Main Memory Page Program • Flexible erase options • Page Erase (512/528 bytes) • Block Erase (4 kB) • Sector Erase (64 kB) • Chip Erase (32 Mbits) • Program and Erase Suspend/Resume • Advanced hardware and software data protection features • Individual sector protection • Individual sector lock-down to make any sector permanently read-only • 128-byte, One-Time Programmable (OTP) Security Register • 64 bytes factory programmed with a unique identifier • 64 bytes user programmable • Hardware and software controlled reset options • JEDEC Standard Manufacturer and Device ID Read • Low-power dissipation • 400 nA Ultra-Deep Power-Down current (typical) •3 μA Deep Power-Down current (typical) •25 μA Standby current (typical) • 7 mA Active Read current (typical) • Endurance: 100,000 program/erase cycles per page minimum • Data retention: 20 years • Green (Pb/Halide-free/RoHS compliant) packaging options • 8-lead SOIC (208-mil wide) • 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm) • 8-pad DFN (6 x 8 x 1.0 mm) • Die in Wafer Form AT45DB321E 32-Mbit DataFlash (with Extra 1-Mbits), 2.3 V Minimum SPI Serial Flash Memory |
Аналогичный номер детали - AT45DB321E |
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Аналогичное описание - AT45DB321E |
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