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AT45DB321E датащи(PDF) 59 Page - Renesas Technology Corp

номер детали AT45DB321E
подробное описание детали  32-Mbit DataFlash (with Extra 1-Mbits), 2.3 V Minimum SPI Serial Flash Memory
PDF  80 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB321E датащи(HTML) 59 Page - Renesas Technology Corp

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DS-AT45DB321E-8784 Rev. N
Page 59
9/1/23
© 2023 Renesas Electronics
AT45DB321E Datasheet
18.3 DC Characteristics
1. Typical values measured at 3.0 V at 25
°C.
2. ICC2 during a Buffer Read is 20mA maximum @ 20 MHz.
Symbol
Parameter
Condition
Min
Typ
Max
Units
IUDPD
Ultra-Deep Power-Down Current
CS= VCC. All other inputs at 0 V or VCC
0.4
1
µA
IDPD
Deep Power-Down Current
CS= VCC. All other inputs at 0 V or VCC
512
µA
ISB
Standby Current
CS= VCC. All other inputs at 0 V or VCC
25
50
µA
ICC1
Active Current, Low Power Read
(01h) Operation
f = 1 MHz; IOUT = 0 mA
6
9
mA
f = 15 MHz; IOUT = 0 mA
7
11
mA
ICC2[1][2]
Active Current,
Read Operation
f = 50 MHz; IOUT = 0 mA
12
17
mA
f = 85 MHz; IOUT = 0 mA
16
22
mA
ICC3
Active Current,
Program Operation
CS=VCC
12
18
mA
ICC4
Active Current, Erase Operation
CS=VCC
12
18
mA
ILI
Input Load Current
All inputs at CMOS levels
1
µA
ILO
Output Leakage Current
All inputs at CMOS levels
1
µA
VIL
Input Low Voltage
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.6
V
VOL
Output Low Voltage
IOL = 100 µA
0.4
V
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2 V
V



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