IMXRT1160AXEC datasheet(53/130 Pages) NXP

номер детали	IMXRT1160AXEC

подробное описание детали	i.MX RT1160 Crossover Processors Data Sheet for Extended Industrial Products

PDF	130 Pages

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производитель	NXP [NXP Semiconductors]

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Electrical characteristics

i.MX RT1160 Crossover Processors Data Sheet for Extended Industrial Products, Rev. 4, 06/2025

NXP Semiconductors

Figure 8. GPIO block diagram

4.3.2.2

Overshoot parameters

When the chip IOs are used for interfacing with external high-speed device, it is very probable that voltage

overshoot and undershoot occur on the high-speed signal path. Here overshoot is defined as the voltage

above VDD and undershoot is voltage below GND. Furthermore, we also define the respective

over/under-shoot area, which is the total area (voltage x time) total area of above VDD / below GND,

respectively.

The overshoot /undershoot depends on the transmission line length (T-Line in mm) and on the terminal

loading (CL in pF). This loading parameter is characteristic of the high-speed device (external SDRAM

for example). Figure 9 illustrates the MCU-SDRAM circuit with overshoot/undershoot occurring. The list

given in Table 40 and Table 41 for different configurations are the maximum allowed

overshoot/undershoot that should not be exceeded to avoid damaging the RT1170 chip. For all the different

configurations, the overshoot/undershoot area (unit:V-ns) should not exceed 0.8Vns, which is an IO

specification.

IOMUX/IOMUXC

Pad

IPP_OBE

IPP_DSE

IPP_DO

IPP_SRE

PU/PD logic

PU/PD device

IPP_PUE

IPP_IND

IPP_IBE

IPP_HYS

INPUT RECEIVER

IPP_PUS

IMXRT1160AXEC датащи(PDF) 53 Page - NXP Semiconductors