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IMXRT1160AXEC датащи(PDF) 46 Page - NXP Semiconductors |
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IMXRT1160AXEC датащи(HTML) 46 Page - NXP Semiconductors |
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46 / 130 page ![]() i.MX RT1160 Crossover Processors Data Sheet for Extended Industrial Products, Rev. 4, 06/2025 46 NXP Semiconductors Electrical characteristics Low level input voltage VIL -0.3 — 0.25 x NVCC V — Receiver 1.8 V High level input voltage VIH 0.65 x NVCC — NVCC + 0.3 V — Low level input voltage VIL -0.3 — 0.35 x NVCC V — Driver 3.3 V and driver 1.8 V for PDRV = L and PDRV = H Output high current IOH -6 — — mA VOH = 0.8 x NVCC Output low current IOL 6 — — mA VOL = 0.2 x NVCC Output low/high current total for each IO bank IOCT — — 100 mA — Weak pull-up and pull-down Pull-up / pull-down resistance RHigh 10 — 100 k High voltage range (2.7 V - 3.6 V) Pull-up / pull-down resistance RLow 20 — 50 k Low voltage range (1.65 V - 1.95 V) Table 35. DC specification for GPIO_SNVS bank1 1 By default, functionality of GPIO_SNVS_XX port is determined by the part number. Tamper function is available only on tamper-enabled parts, and GPIO is the only available function on parts which do not support tamper. Parameter Symbol Min Typ2 2 Typical numbers are not guaranteed. Max Unit Condition High level input voltage VIH 0.7 x NVCC_SNVS — NVCC_SNVS+ 0.1 V — Low level input voltage VIL -0.3 — 0.3 x NVCC_SNVS V — Output high current IOH — -45 — A VOH = NVCC_SNVS - 0.3 Output low current IOL — 50 — A VOL = 0.3 Output low/high current total for GPIO_SNVS bank IOCT — — 1 mA — Weak pull-up and pull-down Pull-up and pull-down resistance RHigh/ RLow 100 200 600 k — Table 34. DC specification for GPIO_EMC_B1/GPIO_EMC_B2/GPIO_SD_B1/GPIO_SD_B2/GPIO_DISP_B1 bank (continued) Parameter Symbol Value Unit Condition Min Typ Max |
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