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IMXRT1160AXEC датащи(PDF) 49 Page - NXP Semiconductors |
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IMXRT1160AXEC датащи(HTML) 49 Page - NXP Semiconductors |
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49 / 130 page ![]() Electrical characteristics i.MX RT1160 Crossover Processors Data Sheet for Extended Industrial Products, Rev. 4, 06/2025 NXP Semiconductors 49 4.3.2 I/O AC parameters The GPIO and DDR I/O load circuit and output transition time waveform are shown in Figure 6 and Figure 7. Figure 6. Load circuit for output Figure 7. Output transition time waveform 4.3.2.1 General purpose I/O (GPIO) AC parameters The I/O AC parameters for GPIO are presented in the Table 37 and Table 38, respectively. Table 37. AC specification for GPIO_EMC_B1/GPIO_EMC_B2/GPIO_SD_B1/GPIO_SD_B2/GPIO_DISP_B1 bank Symbol Parameter Test Condition Min Typ Max Unit Driver 1.8 V application fmax Maximum frequency Load = 21 pF (PDRV = L, high drive, 33 — — 208 MHz Load = 15 pF (PDRV = H, low drive, 50 tr Rise time Measured between VOL and VOH 0.4 — 1.32 ns tf Fall time Measured between VOH and VOL 0.4 — 1.32 ns Driver 3.3 V application fmax Maximum frequency Load = 20 pF — — 200 MHz tr Rise time Measured between VOL and VOH — — 3 ns tf Fall time Measured between VOH and VOL — — 3 ns Test Point From Output Under Test CL CL includes package, probe and fixture capacitance 0 V OVDD 20% 80% 80% 20% tr tf Output (at pad) |
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