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IMXRT1160AXEC датащи(PDF) 27 Page - NXP Semiconductors |
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IMXRT1160AXEC датащи(HTML) 27 Page - NXP Semiconductors |
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27 / 130 page ![]() Electrical characteristics i.MX RT1160 Crossover Processors Data Sheet for Extended Industrial Products, Rev. 4, 06/2025 NXP Semiconductors 27 Table 11. Operating ranges Parameter Description Symbol Operating Conditions Min Max1 Unit Comment Run Mode VDD_SOC_IN M7 core at 500 MHz 0.975 1.15 V Powered by external power supply M7 core at 500 MHz 0.975 1.025 V Powered by on-chip DCDC M7 core at 240 MHz 0.9 1.15 V — VDD_LPSR_DIG M4 core at 240 MHz 0.975 1.15 V — M4 core at 120 MHz 0.9 1.15 V — STANDBY Mode VDD_SOC_IN M7 core 0.8 1.15 V — VDD_LPSR_DIG M4 core 0.8 1.15 V — Power for DCDC DCDC_IN — 3.0 3.6 V — Power for PLL, OSC, and LDOs VDDA_1P8_IN — 1.71 1.89 V — Power for LPSR domain VDD_LPSR_IN — 3.0 3.6 V — Power for SNVS and RTC VDD_SNVS_IN — 2.4 3.6 V — Power for USB OTG PHYs VDD_USB_1P8 — 1.65 1.95 V — VDD_USB_3P3 — 3.0 3.6 V — USB VBUS supply USB1_VBUS USB2_VBUS — 2.4 5.5 V — Power for ADC, DAC, and ACMP VDDA_ADC_1P8 — 1.65 1.95 V — VDDA_ADC_3P3 — 3.0 3.6 V — ADC_VREFH — 1.0 1.89 V — Power for MIPI CSI/DSI PHY VDD_MIPI_1P8 — 1.65 1.95 V — VDD_MIPI_1P0 — 0.9 1.1 V — |
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