GND

SDA

SCL

A1

D–

D+

ALERT/ THERM2

A0

V+

THERM

TMP461-EP

6

7

8

9

10

1

2

3

4

5

SMBus

Controller

GND

GND

Overtemperature

Shutdown

1.7V to 3.6V

1.7V to 3.6V

GND

Built-in

Thermal

Transistor

or Diode

FPGA, ADC,

DAC, or ASIC

Figure 9-2. TMP461-EP Basic Connections Using a Processor Built-In Remote Transistor

9.2.1 Design Requirements

The TMP461-EP device is designed to be used with either discrete transistors or substrate transistors built

into processor chips and application-specific integrated circuits (ASICs). Either NPN or PNP transistors can be

used, as long as the base-emitter junction is used as the remote temperature sense. NPN transistors must be

diode-connected. PNP transistors can either be transistor-connected or diode-connected (see Figure 9-1). The

D+ pin waveform is shown in Figure 9-3 while a transistor is connected between the D+ and D– pins. Due

to three different source currents shown in Figure 7-1, the D+ waveform has three levels of voltages during

temperature conversion.

Time (s)

0

0.01

0.02

0.03

0.04

0.05

-0.2

0

0.2

0.4

0.6

0.8

Time (s)

0.02

0.0208

0.0216

0.0224

0.0232

0.024

0.5

0.55

0.6

0.65

0.7

Temperature

Conversion

No

Conversion

No

Conversion

Figure 9-3. D+ Waveform

www.ti.com

TMP461-EP

SNIS241 – SEPTEMBER 2025

Copyright © 2025 Texas Instruments Incorporated

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