SPC563M60X datasheet(80/128 Pages) STMICROELECTRONICS

80 / 128 page

Electrical characteristics

SPC563M64x, SPC563M60x

80/128

DocID14642 Rev 12

The following component configuration is acceptable when using the BCP68 transistor,

however, is not recommended for new designs. Either option 1 or option 2 should be used

for new designs. This option should not be used with the NJD2873 transistor.

4.6.2

Recommended power transistors

The following NPN transistors are recommended for use with the on-chip voltage regulator

controller: ON SemiconductorTM BCP68T1 or NJD2873 as well as Philips SemiconductorTM

BCP68. The collector of the external transistor is preferably connected to the same voltage

supply source as the output stage of the regulator.

4.7

Power up/down sequencing

There is no power sequencing required among power sources during power up and power

down, in order to operate within specification but use of the following sequence is strongly

recommended when the internal regulator is bypassed:

5 V

 3.3 V and 1.2 V

This is also the normal sequence when the internal regulator is enabled.

Although there are no power up/down sequencing requirements to prevent issues like latch-

up, excessive current spikes, etc., the state of the I/O pins during power up/down varies

Table 19. Network 3 component values

Component

Symbol

Minimum

Typical

Maximum

Units

Comment

Transistor emitter

bypass capacitance

4 x 3.4

4 x 6.8

4 x 9.18

µF

X7R, -50%/+35%

RESR

550



Equivalent ESR of

CE capacitors

MCU decoupling

capacitor

4 x 110

4 x 220

4 x 297

X7R, -50%/+35%

Base “snubber”

capacitor

1.1

2.2

2.97

µF

X7R, -50%/+35%

Base “snubber” resistor

13.5

16.5



±10%

Emitter resistor



Not required

(short)

Table 20. Recommended operating characteristics

Symbol

Parameter

Value

Unit

hFE ()

DC current gain (Beta)

60 – 550

—

Absolute minimum power dissipation

>1.0

(1.5 preferred)

ICMaxDC

Minimum peak collector current

1.0

VCESAT

Collector-to-emitter saturation voltage

200–600(1)

VBE

Base-to-emitter voltage

0.4–1.0

Adjust resistor at bipolar transistor collector for 3.3 V/5.0 V to avoid VCE < VCESAT.

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