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LM5064PMH/NOPB датащи(PDF) 29 Page - Texas Instruments

номер детали LM5064PMH/NOPB
подробное описание детали  LM5064 Negative Voltage System Power Management and Protection IC with PMBus
PDF  64 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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LM5064PMH/NOPB датащи(HTML) 29 Page - Texas Instruments

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LM5064
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SNVS718E – JUNE 2011 – REVISED FEBRUARY 2013
A typical value of Rpin can be 22Ω to effectively limit the pin current during extreme negative voltage spikes. If
schottky diodes are used, they only need to be applied to SENSE_K, SENSE, and OUT. Each schottky diode
return pin should be coupled closely with the VEE plane to provide the most effective clamping. The schottky
diode at OUT should be able to withstand at least 100V. VEE_K needs a series resistor even though it’s not
subjected to negative voltage spikes in order to balance the differential current sense voltage signal. Protecting
the SENSE_K, SENSE, and OUT pins from negative voltage spikes will facilitate a robust hot-swap circuit and
smooth operation during extreme reverse current surge events.
PC BOARD GUIDELINES
The following guidelines should be followed when designing the PC board for the LM5064:
- Place the LM5064 close to the board’s input connector to minimize trace inductance from the connector to the
MOSFET (Q1).
- Place a TVS (Z1), directly adjacent to the VCC and VEE pins of the LM5064 to help minimize voltage transients
which may occur on the input supply line. The TVS should be chosen such that the peak VSYS is just lower the
TVS reverse-bias voltage. Transients of 20 volts or greater over the nominal input voltage can easily occur when
the load current is shut off. A small capacitor may be sufficient for low current sense applications (I < 2A). It is
recommended to test the VSYS input voltage transient performance of the circuit by current limiting or shorting the
load and measuring the peak input voltage transient.
- Place a 1 µF ceramic capacitor as close as possible to VREF pin.
- Place a 1 µF ceramic capacitor as close as possible to VDD pin.
- Minimize the inductance between the SENSE, SENSE_K, VEE_K, and VEE pins. There are anti-parallel diodes
between these pins so any voltage greater than 0.3V in either polarity will cause significant current flow through
the diodes, which can result in device failure. Do not place any resistors between these nodes.
- Minimize the impedance between the VEE_K and SENSE_K pins. There are anti-parallel diodes between these
pins so any voltage greater than 0.3V in either polarity will cause significant current flow through the diodes,
which can result in device failure.
- The sense resistor (RS) should be placed close to the LM5064. A trace should connect the VEE source pin and
OUT drain pad of Q1 to the sense resistor to VEE_K and SENSE_K pins, respectively. Connect RS using the
Kelvin techniques shown in Figure 7.
- The high current path from the board’s input to the load (via Q1), and the return path, should be parallel and
close to each other to minimize loop inductance.
- The termination connections for the various components around the LM5064 should be connected directly to
each other, and to the LM5064’s VEE pin connection, and then connected to VSYS at one point. Do not connect
the various component terminations to each other through the high current VSYS line.
- Provide adequate thermal sinking for the series pass device (Q1) to help reduce stresses during turn-on and
turn-off.
- The board’s edge connector can be designed such that the LM5064 detects via the UVLO/EN pin that the
board is being removed, and responds by turning off the load before the supply voltage is disconnected. For
example, in Figure 18, the voltage at the UVLO/EN pin goes to VEE before VSYS is removed from the LM5064 as
a result of the shorter edge connector pin. When the board is inserted into the edge connector, the system
voltage is applied to the LM5064’s VSYS pin before the UVLO voltage is taken high, thereby allowing the LM5064
to turn on the output in a controlled fashion.
Copyright © 2011–2013, Texas Instruments Incorporated
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