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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM29LV640MH датащи(PDF) 49 Page - Advanced Micro Devices |
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AM29LV640MH датащи(HTML) 49 Page - Advanced Micro Devices |
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49 / 62 page  December 14, 2005 Am29LV640MH/L 47 DA TA SH EET AC CHARACTERISTICS Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC. 7. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Speed Options JEDEC Std. Description 90R 101, 101R 112, 112R 120, 120R Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ASO Address Setup Time to OE# low during toggle bit polling Min 15 ns t WLAX t AH Address Hold Time Min 45 ns t AHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns t DVWH t DS Data Setup Time Min 45 ns t WHDX t DH Data Hold Time Min 0 ns t OEPH Output Enable High during toggle bit polling Min 20 ns t GHWL t GHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t ELWL t CS CE# Setup Time Min 0 ns t WHEH t CH CE# Hold Time Min 0 ns t WLWH t WP Write Pulse Width Min 35 ns t WHDL t WPH Write Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 11 µs Per Word Typ 22 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 8.8 µs Per Word Typ 17.6 µs Single Word/Byte Program Operation (Note 2, 5) Byte Typ 100 µs Word 100 µs Single Word/Byte Accelerated Programming Operation (Note 2, 5) Byte Typ 90 µs Word 90 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t VHH V HH Rise and Fall Time (Note 1) Min 250 ns t VCS V CC Setup Time (Note 1) Min 50 µs t BUSY WE# High to RY/BY# Low Min 90 100 110 120 ns t POLL Program Valid Before Status Polling (Note 7) Max 4 µs |
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