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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM29LV640MH датащи(PDF) 29 Page - Advanced Micro Devices |
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AM29LV640MH датащи(HTML) 29 Page - Advanced Micro Devices |
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29 / 62 page  December 14, 2005 Am29LV640MH/L 27 DA TA SH EET ■ Load a value that is greater than the page buffer size during the Number of Locations to Program step. ■ Write to an address in a sector different than the one specified during the Write-Buffer-Load com- mand. ■ Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address during the write buffer data load- ing stage of the operation. ■ Write data other than the Confirm Command after the specified number of data load cycles. The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the de- vice for the next operation. Note that the full 3-cycle Write-to-Buffer-Abort Reset command sequence is re- quired when using Write-Buffer-Programming features in Unlock Bypass mode. Accelerated Program The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically en- ters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device dam- age may result. In addition, no external pullup is nec- essary since the WP#/ACC pin has internal pullup to VCC. Figure 5 illustrates the algorithm for the program oper- ation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. |
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