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2005-2020 Microchip Technology Inc.

DS20005045D-page 19

SST25VF080B

6.0

DC CHARACTERISTICS

TABLE 6-1:

DC OPERATING CHARACTERISTICS

Symbol

Parameter

Limits

Test Conditions

Min.

Max.

Unit

IDDR1

Read Current

—

10

mA

CE# = 0.1 VDD/0.9 VDD@25 MHz, SO = Open

IDDR2

Read Current

—

15

mA

CE# = 0.1 VDD/0.9 VDD@50 MHz, SO = Open

IDDW

Program and Erase Current

—

30

mA

CE# = VDD

ISB

Standby Current

—

30

µA

CE# = VDD, VIN = VDD or VSS

ILI

Input Leakage Current

—

1

µA

VIN = GND to VDD, VDD = VDD Max

ILO

Output Leakage Current

—

1

µA

VOUT = GND to VDD, VDD = VDD Max

VIL

Input Low Voltage

—

0.8

V

VDD = VDD Min

VIH

Input High Voltage

0.7 VDD

—

V

VDD = VDD Max

VOL1

Output Low Voltage

—

0.2

V

IOL = 100 µA, VDD = VDD Min

VOL2

Output Low Voltage

—

0.4

V

IOL = 1.6 mA, VDD = VDD Min

VOH

Output High Voltage

VDD-0.2

—

V

IOH = -100 µA, VDD = VDD Min

TABLE 6-2:

Capacitance (TA = 25°C, f = 1 MHz, Other Pins Open)

Parameter

Description

Test Condition

Maximum

COUT(1)

Output Pin Capacitance

VOUT = 0V

12 pF

CIN(1)

Input Capacitance

VIN = 0V

6 pF

Note 1: This parameter is measured only for initial qualification and after a design or process change that could

affect this parameter.

TABLE 6-3:

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Unit

Test Method

NEND(1)

Endurance

10,000

Cycles

JEDEC Standard A117

TDR(1)

Data Retention

100

Years

JEDEC Standard A103

ILTH(1)

Latch Up

100 + IDD

mA

JEDEC Standard 78

Note 1: This parameter is measured only for initial qualification and after a design or process change that could

affect this parameter.