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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST7LUS5 датащи(PDF) 99 Page - STMicroelectronics |
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ST7LUS5 датащи(HTML) 99 Page - STMicroelectronics |
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99 / 124 page  ST7LUS5, ST7LU05, ST7LU09 Electrical characteristics 99/124 12.6 Memory characteristics Table 70. General timings Symbol Parameter(1) 1. Data based on characterization, not tested in production Conditions Min Typ(2) 2. Data based on typical application software Max Unit tc(INST) Instruction cycle time fCPU = 8 MHz 23 12 tCPU 250 375 1500 ns tv(IT) Interrupt reaction time(3) tv(IT) = ∆tc(INST) + 10 3. Time measured between interrupt event and interrupt vector fetch. ∆t c(INST) is the number of tCPU cycles needed to finish the current instruction execution. 10 22 tCPU 1.25 2.75 µs Table 71. Auto wake-up RC oscillator Symbol Parameter Conditions Min Typ Max Unit VDD(RCAWU) Supply voltage range 3.0 5.0 5.5 V TA(RCAWU) Operating temperature range -40 25 125 °C IDD(RCAWU) Current consumption (1) 1. Data guaranteed by Design Without prescaler 2.0 8.0 14.0 µA AWU RC switched off 0 fOSC(RCAWU) Output frequency (1) 20 33 60 kHz Table 72. RAM and hardware registers(1) 1. TA = -40°C to 125°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(2) 2. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in hardware registers (only in Halt mode). Guaranteed by construction, not tested in production. Halt mode (or RESET) 1.6 V Table 73. Flash program memory Symbol Parameter Conditions(1) Min Typ Max Unit VDD Operating voltage for Flash write/erase 3.0 5.5 V tprog Programming time for 1~32 bytes(2) TA = -40 to +125°C 5 10 ms Programming time for 1 Kbyte TA = +25°C 0.16 0.32 s tRET Data retention(3) TA = +55°C (4) 20 years NRW Write/erase cycles TA = +25°C 10k(5) cycles |
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