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NAND04GR3B датащи(PDF) 42 Page - STMicroelectronics

номер детали NAND04GR3B
подробное описание детали  512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  59 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GR3B датащи(HTML) 42 Page - STMicroelectronics

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Table 23. DC Characteristics, 3V Devices
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
10
20
mA
IDD2
Program
-
-
10
20
mA
IDD3
Erase
-
-
10
20
mA
,''
Standby current (TTL)
E=VIH, WP=0/VDD
1
mA
IDD5
Standby Current (CMOS)
E=VDD-0.2,
WP=0/VDD
-
10
50
µA
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
-
±10
µA
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
-
±10
µA
VIH
Input High Voltage
-
2.0
-
VDD+0.3
V
VIL
Input Low Voltage
-
-0.3
-
0.8
V
VOH
Output High Voltage Level
IOH = -100µA
2.4
-
-
V
VOL
Output Low Voltage Level
IOL = 100µA
-
-
0.4
V
IOL (RB)
Output Low Current (RB)
VOL = 0.4V
8
10
mA
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
-
-
2.5
V



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