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NAND04GR3B датащи(PDF) 51 Page - STMicroelectronics

номер детали NAND04GR3B
подробное описание детали  512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  59 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GR3B датащи(HTML) 51 Page - STMicroelectronics

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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Ready/Busy Signal Electrical Characteristics
Figures 36, 35 and 37 show the electrical charac-
teristics for the Ready/Busy signal. The value re-
quired for the resistor RP can be calculated using
the following equation:
So,
where IL is the sum of the input currents of all the
devices tied to the Ready/Busy signal. RP max is
determined by the maximum value of tr.
Figure 35. Ready/Busy AC Waveform
Figure 36. Ready/Busy Load Circuit
Figure 37. Resistor Value Versus Waveform Timings For Ready/Busy Signal
Note: T = 25°C.
53PLQ
9''PD[ 92/PD[
–
()
,2/ ,/
+
------------------------------------------------------------
=
53PLQ 9
()
9
P$
,/
+
---------------------------
=
53PLQ 9
()
9
P$
,/
+
---------------------------
=
AI07564B
busy
VOH
ready VDD
VOL
tf
tr
AI07563B
RP
VDD
VSS
RB
DEVICE
Open Drain Output
ibusy
ai07565B
RP (KΩ)
12
3
4
100
300
200
1
2
3
1.7
0.85
30
1.7
1.7
1.7
1.7
tr
tf
ibusy
0
400
4
RP (KΩ)
12
3
4
100
300
200
1
2
3
2.4
1.2
0.8
0.6
100
200
300
400
3.6
3.6
3.6
3.6
0
400
4
VDD = 1.8V, CL = 30pF
VDD = 3.3V, CL = 100pF
60
90
120
0.57
0.43



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