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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NAND04GR3B датащи(PDF) 32 Page - STMicroelectronics |
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NAND04GR3B датащи(HTML) 32 Page - STMicroelectronics |
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32 / 59 page  NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 32/59 Automatic Page 0 Read at Power-Up The 3V devices (NANDxxxWxB) feature Automat- ic Page 0 Read at Power-Up, which allows the mi- crocontroller to directly download boot code from page 0, without requiring any command or ad- dress input sequence. The Automatic Page 0 Read feature is particularly suited for applications that boot from the NAND. The 1.8V devices (NANDxxxRxB) do not have the Automatic Page 0 Read at Power-Up feature. Automatic Page 0 Read Description. At power- up, once the supply voltage has reached the threshold level, VDDth, all digital outputs revert to their reset state and the internal NAND device functions (reading, writing, erasing) are enabled. The PRL pin activates the Automatic Page 0 Read function. When PRL is High at power-up, the de- vice automatically switches to read mode where, as in any read operation, the device is busy for a time tBLBH1 during which data is transferred to the Page Buffer. Once the data transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially on the I/O bus by pulsing the Read Enable, R, signal. Figure 18. shows the power-up waveforms for de- vices featuring the Automatic Page Read option. For details on how to order this option, refer to Ta- ble 31., Ordering Information Scheme. Figure 18. Automatic Page 0 Read at Power-Up Note: 1. VDDth is equal to 2.5V for 3V Power Supply devices and to 1.5V for 1.8V Power Supply devices. VDD W E AL CL RB R I/O tBLBH1 Data1 Data2 Data3 Last Data Busy Data Output VDDth (1) ai08665 |
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