NAND04GR3B datasheet(14/59 Pages) STMICROELECTRONICS

14 / 59 page

NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B

14/59

SIGNAL DESCRIPTIONS

See

Figure

3., Logic

Diagram,

and

Table

3., Signal Names, for a brief overview of the sig-

nals connected to this device.

Inputs/Outputs (I/O0-I/O7). Input/Outputs 0 to 7

are used to input the selected address, output the

data during a Read operation or input a command

or data during a Write operation. The inputs are

latched on the rising edge of Write Enable. I/O0-I/

O7 are left floating when the device is deselected

or the outputs are disabled.

Inputs/Outputs (I/O8-I/O15). Input/Outputs 8 to

15 are only available in x16 devices. They are

used to output the data during a Read operation or

input data during a Write operation. Command and

Address Inputs only require I/O0 to I/O7.

The inputs are latched on the rising edge of Write

Enable. I/O8-I/O15 are left floating when the de-

vice is deselected or the outputs are disabled.

Address Latch Enable (AL). The Address Latch

Enable activates the latching of the Address inputs

in the Command Interface. When AL is high, the

inputs are latched on the rising edge of Write En-

able.

Command Latch Enable (CL). The

Command

Latch Enable activates the latching of the Com-

mand inputs in the Command Interface. When CL

is high, the inputs are latched on the rising edge of

Write Enable.

Chip Enable (E). The Chip Enable input acti-

vates the memory control logic, input buffers, de-

coders and sense amplifiers. When Chip Enable is

low, VIL, the device is selected. If Chip Enable

goes high, vIH, while the device is busy, the device

remains selected and does not go into standby

mode.

Read Enable (R). The Read Enable pin, R, con-

trols the sequential data output during Read oper-

ations. Data is valid tRLQV after the falling edge of

R. The falling edge of R also increments the inter-

nal column address counter by one.

Power-Up Read Enable, Lock/Unlock Enable

(PRL). The Power-Up Read Enable, Lock/Unlock

Enable input, PRL, is used to enable and disable

the lock mechanism, and the Automatic Page 0

Read at Power-up option. When PRL is High, VIH,

the device is in Block Lock mode and the Automat-

ic Page 0 Read at Power-Up option is enabled.

The Automatic Page 0 Read at Power-Up option is

available in 3.3V devices only.

If the Power-Up Read Enable, Lock/Unlock En-

able input is not required, the PRL pin should be

left unconnected (Not Connected) or connected to

VSS.

Write Enable (W). The Write Enable input, W,

controls writing to the Command Interface, Input

Address and Data latches. Both addresses and

data are latched on the rising edge of Write En-

able.

During power-up and power-down a recovery time

of 1µs (min) is required before the Command Inter-

face is ready to accept a command. It is recom-

mended to keep Write Enable high during the

recovery time.

Write Protect (WP). The Write Protect pin is an

input that gives a hardware protection against un-

wanted program or erase operations. When Write

Protect is Low, VIL, the device does not accept any

program or erase operations.

It is recommended to keep the Write Protect pin

Low, VIL, during power-up and power-down.

Ready/Busy (RB). The Ready/Busy output, RB,

is an open-drain output that can be used to identify

if the P/E/R Controller is currently active.

When Ready/Busy is Low, VOL, a read, program or

erase operation is in progress. When the operation

completes Ready/Busy goes High, VOH.

The use of an open-drain output allows the Ready/

Busy pins from several memories to be connected

to a single pull-up resistor. A Low will then indicate

that one, or more, of the memories is busy.

Refer to the Ready/Busy Signal Electrical Charac-

teristics section for details on how to calculate the

value of the pull-up resistor.

VDD Supply Voltage. VDD provides the power

supply to the internal core of the memory device.

It is the main power supply for all operations (read,

program and erase).

An internal voltage detector disables all functions

whenever VDD is below 2.5V (for 3V devices) or

1.5V (for 1.8V devices) to protect the device from

any involuntary program/erase during power-tran-

sitions.

Each device in a system should have VDD decou-

pled with a 0.1µF capacitor. The PCB track widths

should be sufficient to carry the required program

and erase currents

VSS Ground. Ground, VSS, is the reference for

the power supply. It must be connected to the sys-

tem ground.

NAND04GR3B датащи(PDF) 14 Page - STMicroelectronics

NAND04GR3B датащи(HTML) 14 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59

датащи скачать

ссылки URL