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TC35679FSG датащи(PDF) 33 Page - Toshiba Semiconductor

номер детали TC35679FSG
подробное описание детали  TC35679FSG-002 Bluetooth® low energy IC
PDF  45 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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TC35679FSG датащи(HTML) 33 Page - Toshiba Semiconductor

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TC35679FSG-002
2018-01-17
33
5.3. DC electric characteristics
5.3.1.
Current Consumption (Design value)
This section shows current consumption. When the operating temperature (Ta) is 25°C, and the operation of each power supply
pin is in the recommendation connection state of our company, the current consumption is an average value.
Table 5-3 Current consumption (VBAT = VDDIO1=VDDIO2 = 3.0 V)
(VSSX=VSSDC=VSSRFIO=VSSA=VSSD1=VSSD2=0 V)
Items
Symbols
Conditions
Pins
(Note)
Ratings
Unit
Min
Typ.
Max
Digital operation
IDDDIG
(Active1)
—
VBAT
—
0.7
—
mA
RX
IDDRX
(Active2)
—
—
3.3
—
TX
IDDTX
(Active3)
Output Power=
0 dBm
—
3.3
—
Low power mode
With Connection
IDDS1
(Sleep)
26 MHz crystal oscillator disabled
32 kHz crystal oscillator enabled
When 144 KB-RAM retention is
performed
VBAT
—
1.8
—
µA
Low power mode
Without Connection
IDDS2
(Backup)
26 MHz crystal oscillator disabled
32 kHz crystal oscillator enabled
When 64 KB-RAM retention is
performed
—
1.3
—
Low power mode
Without Connection
IDDS
(Deep Sleep)
26 MHz crystal oscillator disabled
32 kHz crystal oscillator disabled
—
0.05
—
Note: Current consumption of IO part inActive operation can be changed by buffer setting.



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