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TC35679FSG датащи(PDF) 33 Page - Toshiba Semiconductor |
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TC35679FSG датащи(HTML) 33 Page - Toshiba Semiconductor |
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33 / 45 page ![]() TC35679FSG-002 2018-01-17 33 5.3. DC electric characteristics 5.3.1. Current Consumption (Design value) This section shows current consumption. When the operating temperature (Ta) is 25°C, and the operation of each power supply pin is in the recommendation connection state of our company, the current consumption is an average value. Table 5-3 Current consumption (VBAT = VDDIO1=VDDIO2 = 3.0 V) (VSSX=VSSDC=VSSRFIO=VSSA=VSSD1=VSSD2=0 V) Items Symbols Conditions Pins (Note) Ratings Unit Min Typ. Max Digital operation IDDDIG (Active1) — VBAT — 0.7 — mA RX IDDRX (Active2) — — 3.3 — TX IDDTX (Active3) Output Power= 0 dBm — 3.3 — Low power mode With Connection IDDS1 (Sleep) 26 MHz crystal oscillator disabled 32 kHz crystal oscillator enabled When 144 KB-RAM retention is performed VBAT — 1.8 — µA Low power mode Without Connection IDDS2 (Backup) 26 MHz crystal oscillator disabled 32 kHz crystal oscillator enabled When 64 KB-RAM retention is performed — 1.3 — Low power mode Without Connection IDDS (Deep Sleep) 26 MHz crystal oscillator disabled 32 kHz crystal oscillator disabled — 0.05 — Note: Current consumption of IO part inActive operation can be changed by buffer setting. |
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