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TC35679FSG датащи(PDF) 31 Page - Toshiba Semiconductor

номер детали TC35679FSG
подробное описание детали  TC35679FSG-002 Bluetooth® low energy IC
PDF  45 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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TC35679FSG датащи(HTML) 31 Page - Toshiba Semiconductor

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TC35679FSG-002
2018-01-17
31
5.
Electric Characteristics
5.1. Absolute Maximum Ratings
Absolute maximum ratings must not be exceeded even for a moment. Voltages, currents, and temperatures that exceed the
absolute maximum ratings can cause break-downs, degradations, and damages not only for ICs but also for other components
and boards. Please make sure application designs not to exceed the absolute maximum ratings in any situation.
Table 5-1 Absolute maximum ratings
(VSSX=VSSDC=VSSRFIO=VSSA=VSSD1=VSSD2=0 V)
Note1: It is not supposed that VBAT is grounded while VDDIO is supplied. It can trigger current path from VDDIO to VBAT through
internal circuitry, and may cause degradations and break-downs.
Note2: Keep VDDIO + 0.3 V < 3.9 V.
Items
Symbols (Power supply system)
Ratings
Unit
Min
Max
Power supply
VBAT
VDDIO (Note1)
-0.3
+3.9
V
Input voltage
VIN
-0.3
VDDIO + 0.3 (Note2)
V
Output voltage
VOUT
-0.3
VDDIO + 0.3 (Note2)
V
I/O pin Input current
IIN
-10
+10
mA
Input power
RFIO
—
+6
dBm
Storage temperature
Tstg
-40
+125
°C



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