STM32L010K4 datasheet(65/91 Pages) STMICROELECTRONICS

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DS12323 Rev 3

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STM32L010F4/K4

Electrical characteristics

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•

A supply overvoltage is applied to each power supply pin.

•

A current injection is applied to each input, output and configurable I/O pin.

These tests are compliant with EIA/JESD 78A IC latch-up standard.

6.3.12

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard pins) should be avoided during normal product operation.

However, in order to give an indication of the robustness of the microcontroller in cases

when abnormal injection accidentally happens, susceptibility tests are performed on a

sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher

than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out

of –5 µA/+0 µA range), or other functional failure (for example reset occurrence oscillator

frequency deviation).

The test results are given in the Table 47.

Table 45. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = +25 °C, conforming

to ANSI/JEDEC JS-001

2000

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

TA = +25 °C, conforming

to ANSI/ESD STM5.3.1

500

Table 46. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +85 °C conforming to JESD78A

II level A

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